Piezoelectric Microresonators Based on Aluminim Nitride for Mass Sensing Applications

González Castilla, Sheila and Olivares Roza, Jimena and Iborra Grau, Enrique and Clement Lorenzo, Marta and Sangrador García, Jesús and Malo Gomez, Javier and Izpura Torres, José Ignacio (2008). Piezoelectric Microresonators Based on Aluminim Nitride for Mass Sensing Applications. In: "IEEE SENSORS 2008 Conference", 26/10/2008-29/10/2008, Lecce, Italia. ISBN 978-1-4244-2580-8. pp. 486-489. https://doi.org/10.1109/ICSENS.2008.4716483 Summary: In this wor.

Description

Title: Piezoelectric Microresonators Based on Aluminim Nitride for Mass Sensing Applications
Author/s:
  • González Castilla, Sheila
  • Olivares Roza, Jimena
  • Iborra Grau, Enrique
  • Clement Lorenzo, Marta
  • Sangrador García, Jesús
  • Malo Gomez, Javier
  • Izpura Torres, José Ignacio
Item Type: Presentation at Congress or Conference (Article)
Event Title: IEEE SENSORS 2008 Conference
Event Dates: 26/10/2008-29/10/2008
Event Location: Lecce, Italia
Title of Book: Sensors, 2008 IEEE
Date: 2008
ISBN: 978-1-4244-2580-8
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnología Electrónica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Abstract—In this work we analyze the vibrational behavior of microresonators (cantilevers and bridges) actuated with piezoelectric aluminum nitride (AlN) films, to investigate the suitability of these devices as mass sensors. The resonators of different geometries consisted of a freestanding unimorph structure made up of a metal/AlN/metal piezoelectric stack supported by a Si3N4 structural layer. The out-of-plane motion of the resonators was assessed by laser interferometry. The electrical impedance of the devices exhibited significant variations at some resonant frequencies ranging from 0.5 MHz to 13 MHz. The mass sensitivity of the microresonators was evaluated through the frequency shift of the resonant modes when loading the resonators with SiO2 films. High order resonant modes provided higher mass sensitivities, with values as low as 6 ag/Hz, which improved significantly our previous results.

More information

Item ID: 3872
DC Identifier: http://oa.upm.es/3872/
OAI Identifier: oai:oa.upm.es:3872
DOI: 10.1109/ICSENS.2008.4716483 Summary: In this wor
Official URL: http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=4703548
Deposited by: Memoria Investigacion
Deposited on: 23 Jul 2010 10:12
Last Modified: 20 Apr 2016 13:18
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