Photoexcited-induced sensitivity of InGaAs surface QDs to environment

Milla Rodrigo, María José; Ulloa Herrero, José María y Fernández González, Alvaro de Guzmán (2014). Photoexcited-induced sensitivity of InGaAs surface QDs to environment. "Nanotechnology", v. 25 (n. 44); pp. 1-6. ISSN 0957-4484. https://doi.org/10.1088/0957-4484/25/44/445501.

Descripción

Título: Photoexcited-induced sensitivity of InGaAs surface QDs to environment
Autor/es:
  • Milla Rodrigo, María José
  • Ulloa Herrero, José María
  • Fernández González, Alvaro de Guzmán
Tipo de Documento: Artículo
Título de Revista/Publicación: Nanotechnology
Fecha: 2014
Volumen: 25
Materias:
Palabras Clave Informales: Quantum dots, surface states, photoexcitation, humidity sensors, adsorption
Escuela: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Departamento: Otro
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

A detailed analysis of the impact of illumination on the electrical response of In0.5Ga0.5As surface nanostructures is carried out as a function of different relative humidity conditions. The importance of the surface-to-volume ratio for sensing applications is once more highlighted. From dark-to-photo conditions, the sheet resistance (SR) of a three-dimensional In0.5Ga0.5As nanostructure decays two orders of magnitude compared with that of a two-dimensional nanostructure. The electrical response is found to be vulnerable to the energy of the incident light and the external conditions. Illuminating with high energy light translates into an SR reduction of one order of magnitude under humid atmospheres, whereas it remains nearly unchanged under dry environments. Conversely, lighting with energy below the bulk energy bandgap, shows a negligible effect on the electrical properties regardless the local moisture. Both illumination and humidity are therefore needed for sensing. Photoexcited carriers can only contribute to conductivity if surface states are inactive due to water physisorption. The strong dependence of the electrical response on the environment makes these nanostructures very suitable for the development of highly sensitive and efficient sensing devices.

Más información

ID de Registro: 38814
Identificador DC: http://oa.upm.es/38814/
Identificador OAI: oai:oa.upm.es:38814
Identificador DOI: 10.1088/0957-4484/25/44/445501
URL Oficial: http://iopscience.iop.org/article/10.1088/0957-4484/25/44/445501#metrics
Depositado por: Memoria Investigacion
Depositado el: 22 Dic 2015 18:26
Ultima Modificación: 22 Dic 2015 18:26
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