Analysis of SnS2 hyperdoped with V proposed as efficient absorber material

Seminovski Pérez, Yohanna; Palacios Clemente, Pablo y Wahnón Benarroch, Perla (2014). Analysis of SnS2 hyperdoped with V proposed as efficient absorber material. "Journal of Physics: Condensed Matter", v. 26 (n. 39); pp. 1-9. ISSN 0953-8984. https://doi.org/10.1088/0953-8984/26/39/395501.

Descripción

Título: Analysis of SnS2 hyperdoped with V proposed as efficient absorber material
Autor/es:
  • Seminovski Pérez, Yohanna
  • Palacios Clemente, Pablo
  • Wahnón Benarroch, Perla
Tipo de Documento: Artículo
Título de Revista/Publicación: Journal of Physics: Condensed Matter
Fecha: 2014
Volumen: 26
Materias:
Palabras Clave Informales: Density functional theory, semiconductors, solar cells, tin disulphide
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Otro
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Intermediate-band materials can improve the photovoltaic efficiency of solar cells through the absorption of two subband-gap photons that allow extra electron-hole pair formations. Previous theoretical and experimental findings support the proposal that the layered SnS2 compound, with a band-gap of around 2 eV, is a candidate for an intermediate-band material when it is doped with a specific transition-metal. In this work we characterize vanadium doped SnS2 using density functional theory at the dilution level experimentally found and including a dispersion correction combined with the site-occupancy-disorder method. In order to analyze the electronic characteristics that depend on geometry, two SnS2 polytypes partially substituted with vanadium in symmetry-adapted non-equivalent configurations were studied. In addition the magnetic configurations of vanadium in a SnS2 2H-polytype and its comparison with a 4H-polytype were also characterized. We demonstrate that a narrow intermediate-band is formed, when these dopant atoms are located in different layers. Our theoretical predictions confirm the recent experimental findings in which a paramagnetic intermediate-band material in a SnS2 2H-polytype with 10% vanadium concentration is obtained.

Más información

ID de Registro: 38828
Identificador DC: http://oa.upm.es/38828/
Identificador OAI: oai:oa.upm.es:38828
Identificador DOI: 10.1088/0953-8984/26/39/395501
URL Oficial: http://iopscience.iop.org/article/10.1088/0953-8984/26/39/395501/meta;jsessionid=469401D778DCEECFDDD882DA221F1BC6.c2.iopscience.cld.iop.org
Depositado por: Memoria Investigacion
Depositado el: 18 Ene 2016 19:09
Ultima Modificación: 18 Ene 2016 19:09
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