The use of Abel-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs

Haxha, V. and Garg, R. and Migliorato, M.A. and Drouzas, I.W. and Ulloa Herrero, José María and Koenraad, P.M. and Steer, M.J. and Liu, H.Y. and Hopkinson, M. and Mowbray, D.J. (2008). The use of Abel-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs. In: "8th International Conference on Numerical Simulation of Optoelectronic Devices Nottingham (UK), 2008", 01/09/2008-05/09/2008, Nottingham, UK. ISBN 978-1-4244-2307-1.

Description

Title: The use of Abel-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs
Author/s:
  • Haxha, V.
  • Garg, R.
  • Migliorato, M.A.
  • Drouzas, I.W.
  • Ulloa Herrero, José María
  • Koenraad, P.M.
  • Steer, M.J.
  • Liu, H.Y.
  • Hopkinson, M.
  • Mowbray, D.J.
Item Type: Presentation at Congress or Conference (Article)
Event Title: 8th International Conference on Numerical Simulation of Optoelectronic Devices Nottingham (UK), 2008
Event Dates: 01/09/2008-05/09/2008
Event Location: Nottingham, UK
Title of Book: NUSOD '08 : Proceedings of the 8th International Conference on Numerical Simulation of Optoelectronic Devices
Date: 2008
ISBN: 978-1-4244-2307-1
Subjects:
Faculty: Otros Centros UPM
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

In this paper we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type for atomistic simulations of the elastic properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a function of composition does not follow intuitive averages between the binary constituents. Furthermore we will provide an explanation for the often observed decomposition into ternary components. The predictions of our model appear to be substantiated by experimental evidence of growth of InAs self assembled quantum dots capped by GaSbAs.

More information

Item ID: 3894
DC Identifier: http://oa.upm.es/3894/
OAI Identifier: oai:oa.upm.es:3894
Official URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=04668267
Deposited by: Memoria Investigacion
Deposited on: 27 Jul 2010 07:58
Last Modified: 20 Apr 2016 13:19
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