Modeling of GaInP/GaAs dual junction solar cells including tunnel junction

Baudrit, Mathieu y Algora del Valle, Carlos (2008). Modeling of GaInP/GaAs dual junction solar cells including tunnel junction. En: "33rd IEEE Photovoltaic Specialist Conference. PVSC '08", 11/05/2008-16/05/2008, San Diego (Estados Unidos). ISBN 978-1-4244-1641. pp. 146-150.

Descripción

Título: Modeling of GaInP/GaAs dual junction solar cells including tunnel junction
Autor/es:
  • Baudrit, Mathieu
  • Algora del Valle, Carlos
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 33rd IEEE Photovoltaic Specialist Conference. PVSC '08
Fechas del Evento: 11/05/2008-16/05/2008
Lugar del Evento: San Diego (Estados Unidos)
Título del Libro: Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Fecha: 2008
ISBN: 978-1-4244-1641
Materias:
Palabras Clave Informales: Multi-Junction solar cells, tunnel Junction, simulation
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

This paper presents research efforts conducted at the IES-UPM in the development of an accurate, physically-based solar cell model using the generalpurpose ATLASR device simulator by Silvaco. Unlike solar cell models based on a combination of discrete electrical components, this novel model extracts the electrical characteristics of a solar cell based on virtual fabrication of its physical structure, allowing for direct manipulation of materials, dimensions, and dopings. As single junction solar cells simulation was yet achieved, the next step towards advanced simulations of multi-junction cells (MJC) is the simulation of the tunnel diodes, which interconnect the subcells in a monolithic MJC. The first results simulating a Dual- Junction (DJ) GaInP/GaAs solar cells are shown in this paper including a complete Tunnel Junction (TJ) model and the resonant cavity effect occurring in the bottom cell. Simulation and experimental results were compared in order to test the accuracy of the models employed.

Más información

ID de Registro: 3896
Identificador DC: http://oa.upm.es/3896/
Identificador OAI: oai:oa.upm.es:3896
URL Oficial: http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=4815197
Depositado por: Memoria Investigacion
Depositado el: 27 Jul 2010 08:21
Ultima Modificación: 20 Abr 2016 13:19
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