Modeling of GaInP/GaAs dual junction solar cells including tunnel junction

Baudrit, Mathieu and Algora del Valle, Carlos (2008). Modeling of GaInP/GaAs dual junction solar cells including tunnel junction. In: "33rd IEEE Photovoltaic Specialist Conference. PVSC '08", 11/05/2008-16/05/2008, San Diego (Estados Unidos). ISBN 978-1-4244-1641. pp. 146-150.

Description

Title: Modeling of GaInP/GaAs dual junction solar cells including tunnel junction
Author/s:
  • Baudrit, Mathieu
  • Algora del Valle, Carlos
Item Type: Presentation at Congress or Conference (Article)
Event Title: 33rd IEEE Photovoltaic Specialist Conference. PVSC '08
Event Dates: 11/05/2008-16/05/2008
Event Location: San Diego (Estados Unidos)
Title of Book: Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Date: 2008
ISBN: 978-1-4244-1641
Subjects:
Freetext Keywords: Multi-Junction solar cells, tunnel Junction, simulation
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

This paper presents research efforts conducted at the IES-UPM in the development of an accurate, physically-based solar cell model using the generalpurpose ATLASR device simulator by Silvaco. Unlike solar cell models based on a combination of discrete electrical components, this novel model extracts the electrical characteristics of a solar cell based on virtual fabrication of its physical structure, allowing for direct manipulation of materials, dimensions, and dopings. As single junction solar cells simulation was yet achieved, the next step towards advanced simulations of multi-junction cells (MJC) is the simulation of the tunnel diodes, which interconnect the subcells in a monolithic MJC. The first results simulating a Dual- Junction (DJ) GaInP/GaAs solar cells are shown in this paper including a complete Tunnel Junction (TJ) model and the resonant cavity effect occurring in the bottom cell. Simulation and experimental results were compared in order to test the accuracy of the models employed.

More information

Item ID: 3896
DC Identifier: http://oa.upm.es/3896/
OAI Identifier: oai:oa.upm.es:3896
Official URL: http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=4815197
Deposited by: Memoria Investigacion
Deposited on: 27 Jul 2010 08:21
Last Modified: 20 Apr 2016 13:19
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