Nanoporous GaN by UV assisted electroless etching for sensor applications

Sillero Herrero, Eugenio and Eickhoff, M. and Calle Gómez, Fernando (2008). Nanoporous GaN by UV assisted electroless etching for sensor applications. In: "The 5th International Workshop on Nitride semiconductors (IWN2008)", 06/10/2008-10/10/2008, Montreaux, Suiza.

Description

Title: Nanoporous GaN by UV assisted electroless etching for sensor applications
Author/s:
  • Sillero Herrero, Eugenio
  • Eickhoff, M.
  • Calle Gómez, Fernando
Item Type: Presentation at Congress or Conference (Article)
Event Title: The 5th International Workshop on Nitride semiconductors (IWN2008)
Event Dates: 06/10/2008-10/10/2008
Event Location: Montreaux, Suiza
Title of Book: Proceedings of the 5th International Workshop on Nitride semiconductors (IWN2008)
Date: 2008
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

GaN-based devices have demonstrated excellent performance for electronics and optoelectronics applications. In particular, these devices exhibit very good performance when operated at high temperatures and in harsh environments when compared to similar devices fabricated with conventional material systems. The good stability, durability and biocompatibility of the nitrides have also led to the development of GaN based chemical and biological gas sensors. These devices have been developed using Schottky diodes with platinum or palladium contacts on GaN and AlGaN/GaN structures [1-3] and showed high sensitivity. However, the response may be further improved if the effective surface área is increased, allowing a more efficient accumulation of the gas induced dipole layer [4]. In this paper fabrication and characterization of nanoporous GaN is presented as a fírst step for the fabrication of improved GaN gas sensors.

More information

Item ID: 3913
DC Identifier: http://oa.upm.es/3913/
OAI Identifier: oai:oa.upm.es:3913
Official URL: http://iwn2008.epfl.ch/
Deposited by: Memoria Investigacion
Deposited on: 28 Jul 2010 07:58
Last Modified: 20 Apr 2016 13:20
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