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Castellanos, Sergio and Ekstrom, Kay E. and Autruffe, Antoine and Jensen, Mallory A. and Morishige, Ashley E. and Hofstetter, Jasmin and Yen, Patricia and Lai, Barry and Stokkan, Gaute and Cañizo Nadal, Carlos del and Buonassisi, Tonio (2016). High-Performance and Traditional Multicrystalline Silicon: Comparing Gettering Responses and Lifetime-Limiting Defects. "IEEE Journal of Photovoltaics", v. 99 ; pp. 1-9. ISSN 2156-3381. https://doi.org/10.1109/JPHOTOV.2016.2540246.
Title: | High-Performance and Traditional Multicrystalline Silicon: Comparing Gettering Responses and Lifetime-Limiting Defects |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | IEEE Journal of Photovoltaics |
Date: | April 2016 |
ISSN: | 2156-3381 |
Volume: | 99 |
Subjects: | |
Freetext Keywords: | Cooling, Gettering, Grain boundaries, Iron, Photovoltaic systems, Silicon, Defects, dislocation recombination activity, dislocations, eccentricity variation, high-performance multicrystalline silicon (HPMC-Si), minority-carrier lifetime, photovoltaics, recombination, synchrotron |
Faculty: | Instituto de Energía Solar (IES) (UPM) |
Department: | Electrónica Física |
UPM's Research Group: | Silicio y Nuevos Conceptos de Células Solares |
Creative Commons Licenses: | None |
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In recent years, high-performance multicrystalline silicon (HPMC-Si) has emerged as an attractive alternative to traditional ingot-based multicrystalline silicon (mc-Si), with a similar cost structure but improved cell performance. Herein, we evaluate the gettering response of traditional mc-Si and HPMC-Si. Microanalytical techniques demonstrate that HPMC-Si and mc-Si share similar lifetime-limiting defect types but have different relative concentrations and distributions. HPMC-Si shows a substantial lifetime improvement after P-gettering compared with mc-Si, chiefly because of lower area fraction of dislocation-rich clusters. In both materials, the dislocation clusters and grain boundaries were associated with relatively higher interstitial iron point-defect concentrations after diffusion, which is suggestive of dissolving metal-impurity precipitates. The relatively fewer dislocation clusters in HPMC-Si are shown to exhibit similar characteristics to those found in mc-Si. Given similar governing principles, a proxy to determine relative recombination activity of dislocation clusters developed for mc-Si is successfully transferred to HPMC-Si. The lifetime in the remainder of HPMC-Si material is found to be limited by grain-boundary recombination. To reduce the recombination activity of grain boundaries in HPMC-Si, coordinated impurity control during growth, gettering, and passivation must be developed.
Type | Code | Acronym | Leader | Title |
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Government of Spain | ENE2014-56069-C4-2-R | TABACO | Prof. Carlos del Cañizo | Células tandem en silicio de bajo coste con obleas muy delgadas y procesos apropiados |
Item ID: | 39903 |
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DC Identifier: | http://oa.upm.es/39903/ |
OAI Identifier: | oai:oa.upm.es:39903 |
DOI: | 10.1109/JPHOTOV.2016.2540246 |
Official URL: | https://ieeexplore.ieee.org/document/7447656 |
Deposited by: | Profesor Titular Carlos del Cañizo Nadal |
Deposited on: | 01 Jun 2016 08:33 |
Last Modified: | 13 Mar 2019 16:54 |