High-Performance and Traditional Multicrystalline Silicon: Comparing Gettering Responses and Lifetime-Limiting Defects

Castellanos, Sergio and Ekstrom, Kay E. and Autruffe, Antoine and Jensen, Mallory A. and Morishige, Ashley E. and Hofstetter, Jasmin and Yen, Patricia and Lai, Barry and Stokkan, Gaute and Cañizo Nadal, Carlos del and Buonassisi, Tonio (2016). High-Performance and Traditional Multicrystalline Silicon: Comparing Gettering Responses and Lifetime-Limiting Defects. "IEEE Journal of Photovoltaics", v. 99 ; pp. 1-9. ISSN 2156-3381. https://doi.org/10.1109/JPHOTOV.2016.2540246.

Description

Title: High-Performance and Traditional Multicrystalline Silicon: Comparing Gettering Responses and Lifetime-Limiting Defects
Author/s:
  • Castellanos, Sergio
  • Ekstrom, Kay E.
  • Autruffe, Antoine
  • Jensen, Mallory A.
  • Morishige, Ashley E.
  • Hofstetter, Jasmin
  • Yen, Patricia
  • Lai, Barry
  • Stokkan, Gaute
  • Cañizo Nadal, Carlos del
  • Buonassisi, Tonio
Item Type: Article
Título de Revista/Publicación: IEEE Journal of Photovoltaics
Date: April 2016
ISSN: 2156-3381
Volume: 99
Subjects:
Freetext Keywords: Cooling, Gettering, Grain boundaries, Iron, Photovoltaic systems, Silicon, Defects, dislocation recombination activity, dislocations, eccentricity variation, high-performance multicrystalline silicon (HPMC-Si), minority-carrier lifetime, photovoltaics, recombination, synchrotron
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
UPM's Research Group: Silicio y Nuevos Conceptos de Células Solares
Creative Commons Licenses: None

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Abstract

In recent years, high-performance multicrystalline silicon (HPMC-Si) has emerged as an attractive alternative to traditional ingot-based multicrystalline silicon (mc-Si), with a similar cost structure but improved cell performance. Herein, we evaluate the gettering response of traditional mc-Si and HPMC-Si. Microanalytical techniques demonstrate that HPMC-Si and mc-Si share similar lifetime-limiting defect types but have different relative concentrations and distributions. HPMC-Si shows a substantial lifetime improvement after P-gettering compared with mc-Si, chiefly because of lower area fraction of dislocation-rich clusters. In both materials, the dislocation clusters and grain boundaries were associated with relatively higher interstitial iron point-defect concentrations after diffusion, which is suggestive of dissolving metal-impurity precipitates. The relatively fewer dislocation clusters in HPMC-Si are shown to exhibit similar characteristics to those found in mc-Si. Given similar governing principles, a proxy to determine relative recombination activity of dislocation clusters developed for mc-Si is successfully transferred to HPMC-Si. The lifetime in the remainder of HPMC-Si material is found to be limited by grain-boundary recombination. To reduce the recombination activity of grain boundaries in HPMC-Si, coordinated impurity control during growth, gettering, and passivation must be developed.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainENE2014-56069-C4-2-RTABACOProf. Carlos del CañizoCélulas tandem en silicio de bajo coste con obleas muy delgadas y procesos apropiados

More information

Item ID: 39903
DC Identifier: http://oa.upm.es/39903/
OAI Identifier: oai:oa.upm.es:39903
DOI: 10.1109/JPHOTOV.2016.2540246
Official URL: https://ieeexplore.ieee.org/document/7447656
Deposited by: Profesor Titular Carlos del Cañizo Nadal
Deposited on: 01 Jun 2016 08:33
Last Modified: 13 Mar 2019 16:54
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