High-Performance and Traditional Multicrystalline Silicon: Comparing Gettering Responses and Lifetime-Limiting Defects

Castellanos, Sergio; Ekstrom, Kay E.; Autruffe, Antoine; Jensen, Mallory A.; Morishige, Ashley E.; Hofstetter, Jasmin; Yen, Patricia; Lai, Barry; Stokkan, Gaute; Cañizo Nadal, Carlos del y Buonassisi, Tonio (2016). High-Performance and Traditional Multicrystalline Silicon: Comparing Gettering Responses and Lifetime-Limiting Defects. "IEEE Journal of Photovoltaics", v. 99 ; pp. 1-9. ISSN 2156-3381. https://doi.org/10.1109/JPHOTOV.2016.2540246.

Descripción

Título: High-Performance and Traditional Multicrystalline Silicon: Comparing Gettering Responses and Lifetime-Limiting Defects
Autor/es:
  • Castellanos, Sergio
  • Ekstrom, Kay E.
  • Autruffe, Antoine
  • Jensen, Mallory A.
  • Morishige, Ashley E.
  • Hofstetter, Jasmin
  • Yen, Patricia
  • Lai, Barry
  • Stokkan, Gaute
  • Cañizo Nadal, Carlos del
  • Buonassisi, Tonio
Tipo de Documento: Artículo
Título de Revista/Publicación: IEEE Journal of Photovoltaics
Fecha: Abril 2016
Volumen: 99
Materias:
Palabras Clave Informales: Cooling, Gettering, Grain boundaries, Iron, Photovoltaic systems, Silicon, Defects, dislocation recombination activity, dislocations, eccentricity variation, high-performance multicrystalline silicon (HPMC-Si), minority-carrier lifetime, photovoltaics, recombination, synchrotron
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Electrónica Física
Grupo Investigación UPM: Silicio y Nuevos Conceptos de Células Solares
Licencias Creative Commons: Ninguna

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Resumen

In recent years, high-performance multicrystalline silicon (HPMC-Si) has emerged as an attractive alternative to traditional ingot-based multicrystalline silicon (mc-Si), with a similar cost structure but improved cell performance. Herein, we evaluate the gettering response of traditional mc-Si and HPMC-Si. Microanalytical techniques demonstrate that HPMC-Si and mc-Si share similar lifetime-limiting defect types but have different relative concentrations and distributions. HPMC-Si shows a substantial lifetime improvement after P-gettering compared with mc-Si, chiefly because of lower area fraction of dislocation-rich clusters. In both materials, the dislocation clusters and grain boundaries were associated with relatively higher interstitial iron point-defect concentrations after diffusion, which is suggestive of dissolving metal-impurity precipitates. The relatively fewer dislocation clusters in HPMC-Si are shown to exhibit similar characteristics to those found in mc-Si. Given similar governing principles, a proxy to determine relative recombination activity of dislocation clusters developed for mc-Si is successfully transferred to HPMC-Si. The lifetime in the remainder of HPMC-Si material is found to be limited by grain-boundary recombination. To reduce the recombination activity of grain boundaries in HPMC-Si, coordinated impurity control during growth, gettering, and passivation must be developed.

Proyectos asociados

TipoCódigoAcrónimoResponsableTítulo
Gobierno de EspañaENE2014-56069-C4-2-RTABACOProf. Carlos del CañizoCélulas tandem en silicio de bajo coste con obleas muy delgadas y procesos apropiados

Más información

ID de Registro: 39903
Identificador DC: http://oa.upm.es/39903/
Identificador OAI: oai:oa.upm.es:39903
Identificador DOI: 10.1109/JPHOTOV.2016.2540246
Depositado por: Profesor Titular Carlos del Cañizo Nadal
Depositado el: 01 Jun 2016 08:33
Ultima Modificación: 01 Jun 2017 22:30
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