Ti/Pd/Ag Contacts to n-Type GaAs for High Current Density Devices

Huo, Pengyun y Rey-Stolle Prado, Ignacio (2016). Ti/Pd/Ag Contacts to n-Type GaAs for High Current Density Devices. "Journal of Electronic Materials", v. 45 (n. 6); pp. 2769-2775. ISSN 0361-5235. https://doi.org/10.1007/s11664-016-4432-6.

Descripción

Título: Ti/Pd/Ag Contacts to n-Type GaAs for High Current Density Devices
Autor/es:
  • Huo, Pengyun
  • Rey-Stolle Prado, Ignacio
Tipo de Documento: Artículo
Título de Revista/Publicación: Journal of Electronic Materials
Fecha: Junio 2016
Volumen: 45
Materias:
Palabras Clave Informales: Ohmic contact, n-GaAs, high conductivity
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Electrónica Física
Grupo Investigación UPM: Semiconductores III-V
Licencias Creative Commons: Ninguna

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Resumen

The metallization stack Ti/Pd/Ag on n-type Si has been readily used in solar cells due to its low metal/semiconductor specific contact resistance, very high sheet conductance, bondability, long-term durability, and cost-effectiveness. In this study, the use of Ti/Pd/Ag metallization on n-type GaAs is examined, targeting electronic devices that need to handle high current densities and with grid-like contacts with limited surface coverage (i.e., solar cells, lasers, or light emitting diodes). Ti/Pd/Ag (50 nm/50 nm/1000 nm) metal layers were deposited on n-type GaAs by electron beam evaporation and the contact quality was assessed for different doping levels (from 1.3 × 1018 cm−3 to 1.6 × 1019 cm−3) and annealing temperatures (from 300°C to 750°C). The metal/semiconductor specific contact resistance, metal resistivity, and the morphology of the contacts were studied. The results show that samples doped in the range of 1018 cm−3 had Schottky-like I–V characteristics and only samples doped 1.6 × 1019 cm−3 exhibited ohmic behavior even before annealing. For the ohmic contacts, increasing annealing temperature causes a decrease in the specific contact resistance (ρ c,Ti/Pd/Ag ~ 5 × 10−4 Ω cm2). In regard to the metal resistivity, Ti/Pd/Ag metallization presents a very good metal conductivity for samples treated below 500°C (ρ M,Ti/Pd/Ag ~ 2.3 × 10−6 Ω cm); however, for samples treated at 750°C, metal resistivity is strongly degraded due to morphological degradation and contamination in the silver overlayer. As compared to the classic AuGe/Ni/Au metal system, the Ti/Pd/Ag system shows higher metal/semiconductor specific contact resistance and one order of magnitude lower metal resistivity.

Proyectos asociados

TipoCódigoAcrónimoResponsableTítulo
Gobierno de EspañaTEC2012-37286Sin especificarIgnacio Rey-StolleFabricación por MOVPE de células solares multiunion de semiconductores III-V sobre silicio

Más información

ID de Registro: 40235
Identificador DC: http://oa.upm.es/40235/
Identificador OAI: oai:oa.upm.es:40235
Identificador DOI: 10.1007/s11664-016-4432-6
Depositado por: Dr Ignacio Rey-Stolle
Depositado el: 05 May 2016 10:49
Ultima Modificación: 01 Jul 2017 22:30
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