Implications of redesigned, high-radiative-efficiency GaInP junctions on III-V multijunction concentrator solar cells

Geisz, John F. and Steiner, Myles A. and García Vara, Iván and France, Ryan M. and Friedman, Daniel J. and Kurtz, Sarah R. (2015). Implications of redesigned, high-radiative-efficiency GaInP junctions on III-V multijunction concentrator solar cells. "IEEE Journal of Photovoltaics", v. 5 (n. 1); pp. 418-424. ISSN 2156-3381. https://doi.org/10.1109/JPHOTOV.2014.2361014.

Description

Title: Implications of redesigned, high-radiative-efficiency GaInP junctions on III-V multijunction concentrator solar cells
Author/s:
  • Geisz, John F.
  • Steiner, Myles A.
  • García Vara, Iván
  • France, Ryan M.
  • Friedman, Daniel J.
  • Kurtz, Sarah R.
Item Type: Article
Título de Revista/Publicación: IEEE Journal of Photovoltaics
Date: January 2015
ISSN: 2156-3381
Volume: 5
Subjects:
Freetext Keywords: Luminescent coupling, multijunction photovoltaic cells, radiative efficiency, III-V
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Nonradiative recombination in inverted GaInP junctions is dramatically reduced using a rear-heterojunction design rather than the more traditional thin-emitter homojunction design. When this GaInP junction design is included in inverted multijunction solar cells, the high radiative efficiency translates into both higher subcell voltage and high luminescence coupling to underlying subcells, both of which contribute to improved performance. Subcell voltages within two and four junction devices are measured by electroluminescence and the internal radiative efficiency is quantified as a function of recombination current using optical modeling. The performance of these concentrator multijunction devices is compared with the Shockley–Queisser detailed-balance radiative limit, as well as an internal radiative limit, which considers the effects of the actual optical environment in which a perfect junction may exist.

Funding Projects

TypeCodeAcronymLeaderTitle
FP7299878METACELLSUNIVERSIDAD POLITECNICA DE MADRIDAdvanced epitaxy of metamorphic semiconductor structures for multijunction solar cells

More information

Item ID: 40484
DC Identifier: http://oa.upm.es/40484/
OAI Identifier: oai:oa.upm.es:40484
DOI: 10.1109/JPHOTOV.2014.2361014
Official URL: https://ieeexplore.ieee.org/document/6930722
Deposited by: Memoria Investigacion
Deposited on: 23 May 2016 17:53
Last Modified: 05 Jun 2019 13:46
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