Implications of redesigned, high-radiative-efficiency GaInP junctions on III-V multijunction concentrator solar cells

Geisz, John F.; Steiner, Myles A.; García Vara, Iván; France, Ryan M.; Friedman, Daniel J. y Kurtz, Sarah R. (2015). Implications of redesigned, high-radiative-efficiency GaInP junctions on III-V multijunction concentrator solar cells. "IEEE Journal of Photovoltaics", v. 5 (n. 1); pp. 418-424. ISSN 2156-3381.

Descripción

Título: Implications of redesigned, high-radiative-efficiency GaInP junctions on III-V multijunction concentrator solar cells
Autor/es:
  • Geisz, John F.
  • Steiner, Myles A.
  • García Vara, Iván
  • France, Ryan M.
  • Friedman, Daniel J.
  • Kurtz, Sarah R.
Tipo de Documento: Artículo
Título de Revista/Publicación: IEEE Journal of Photovoltaics
Fecha: Enero 2015
Volumen: 5
Materias:
Palabras Clave Informales: Luminescent coupling, multijunction photovoltaic cells, radiative efficiency, III-V
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Nonradiative recombination in inverted GaInP junctions is dramatically reduced using a rear-heterojunction design rather than the more traditional thin-emitter homojunction design. When this GaInP junction design is included in inverted multijunction solar cells, the high radiative efficiency translates into both higher subcell voltage and high luminescence coupling to underlying subcells, both of which contribute to improved performance. Subcell voltages within two and four junction devices are measured by electroluminescence and the internal radiative efficiency is quantified as a function of recombination current using optical modeling. The performance of these concentrator multijunction devices is compared with the Shockley–Queisser detailed-balance radiative limit, as well as an internal radiative limit, which considers the effects of the actual optical environment in which a perfect junction may exist.

Proyectos asociados

TipoCódigoAcrónimoResponsableTítulo
FP7299878METACELLSUNIVERSIDAD POLITECNICA DE MADRIDAdvanced epitaxy of metamorphic semiconductor structures for multijunction solar cells

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Depositado el: 23 May 2016 17:53
Ultima Modificación: 23 May 2016 17:53
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