Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries

Martin Horcajo, Sara and Wang, Ashu and Bosca Mojena, Alberto and Romero Rojo, Fátima and Tadjer, Marko Jak and Koehler, Andrew D. and Anderson, Travis J. and Calle Gómez, Fernando (2015). Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries. "Semiconductor Science and Technology", v. 30 (n. 3); pp. 1-10. ISSN 0268-1242. https://doi.org/10.1088/0268-1242/30/3/035015.

Description

Title: Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries
Author/s:
  • Martin Horcajo, Sara
  • Wang, Ashu
  • Bosca Mojena, Alberto
  • Romero Rojo, Fátima
  • Tadjer, Marko Jak
  • Koehler, Andrew D.
  • Anderson, Travis J.
  • Calle Gómez, Fernando
Item Type: Article
Título de Revista/Publicación: Semiconductor Science and Technology
Date: 2015
ISSN: 0268-1242
Volume: 30
Subjects:
Freetext Keywords: GaN-based HEMTs, gate length, gate-to-drain distance, pulsed measurements, trapping effects, virtual gate, drain current transient
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

PAPER Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries S Martin-Horcajo1, A Wang1, A Bosca1, M F Romero1, M J Tadjer1,2, A D Koehler2, T J Anderson2 and F Calle1 Published 11 February 2015 • © 2015 IOP Publishing Ltd Semiconductor Science and Technology, Volume 30, Number 3 Article PDF Figures References Citations Metrics 350 Total downloads Cited by 1 articles Export citation and abstract BibTeX RIS Turn on MathJax Share this article Article information Abstract Trapping effects were evaluated by means of pulsed measurements under different quiescent biases for GaN/AlGaN/GaN and GaN/InAlN/GaN. It was found that devices with an AlGaN barrier underwent an increase in the on-resistance, and a drain current and transconductance reduction without measurable threshold voltage change, suggesting the location of the traps in the gate-drain access region. In contrast, devices with an InAlN barrier showed a transconductance and a decrease in drain associated with a significant positive shift of threshold voltage, indicating that the traps were likely located under the gate region; as well as an on-resistance degradation probably associated with the presence of surface traps in the gate-drain access region. Furthermore, measurements of drain current transients at different ambient temperatures revealed that the activation energy of electron traps was 0.43 eV and 0.38 eV for AlGaN and InAlN barrier devices, respectively. Experimental and simulation results demonstrated the influence of device geometry on the observed trapping effects, since devices with larger gate lengths and gate-to-drain distance values exhibited less noticeable charge trapping effects.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainCSD2009-0046RUEUnspecifiedUnspecified
Government of SpainTEC2012-38247CAVEUnspecifiedUnspecified

More information

Item ID: 40785
DC Identifier: http://oa.upm.es/40785/
OAI Identifier: oai:oa.upm.es:40785
DOI: 10.1088/0268-1242/30/3/035015
Official URL: http://iopscience.iop.org/article/10.1088/0268-1242/30/3/035015/meta;jsessionid=583AC529BDA5D8A6F766CF07E7E7D1A0.c1.iopscience.cld.iop.org
Deposited by: Memoria Investigacion
Deposited on: 06 Sep 2016 16:27
Last Modified: 06 Sep 2016 16:27
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