Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries

Martin Horcajo, Sara; Wang, Ashu; Bosca Mojena, Alberto; Romero Rojo, Fátima; Tadjer, Marko Jak; Koehler, Andrew D.; Anderson, Travis J. y Calle Gómez, Fernando (2015). Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries. "Semiconductor Science and Technology", v. 30 (n. 3); pp. 1-10. ISSN 0268-1242. https://doi.org/10.1088/0268-1242/30/3/035015.

Descripción

Título: Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries
Autor/es:
  • Martin Horcajo, Sara
  • Wang, Ashu
  • Bosca Mojena, Alberto
  • Romero Rojo, Fátima
  • Tadjer, Marko Jak
  • Koehler, Andrew D.
  • Anderson, Travis J.
  • Calle Gómez, Fernando
Tipo de Documento: Artículo
Título de Revista/Publicación: Semiconductor Science and Technology
Fecha: 2015
Volumen: 30
Materias:
Palabras Clave Informales: GaN-based HEMTs, gate length, gate-to-drain distance, pulsed measurements, trapping effects, virtual gate, drain current transient
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Ingeniería Electrónica
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

PAPER Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries S Martin-Horcajo1, A Wang1, A Bosca1, M F Romero1, M J Tadjer1,2, A D Koehler2, T J Anderson2 and F Calle1 Published 11 February 2015 • © 2015 IOP Publishing Ltd Semiconductor Science and Technology, Volume 30, Number 3 Article PDF Figures References Citations Metrics 350 Total downloads Cited by 1 articles Export citation and abstract BibTeX RIS Turn on MathJax Share this article Article information Abstract Trapping effects were evaluated by means of pulsed measurements under different quiescent biases for GaN/AlGaN/GaN and GaN/InAlN/GaN. It was found that devices with an AlGaN barrier underwent an increase in the on-resistance, and a drain current and transconductance reduction without measurable threshold voltage change, suggesting the location of the traps in the gate-drain access region. In contrast, devices with an InAlN barrier showed a transconductance and a decrease in drain associated with a significant positive shift of threshold voltage, indicating that the traps were likely located under the gate region; as well as an on-resistance degradation probably associated with the presence of surface traps in the gate-drain access region. Furthermore, measurements of drain current transients at different ambient temperatures revealed that the activation energy of electron traps was 0.43 eV and 0.38 eV for AlGaN and InAlN barrier devices, respectively. Experimental and simulation results demonstrated the influence of device geometry on the observed trapping effects, since devices with larger gate lengths and gate-to-drain distance values exhibited less noticeable charge trapping effects.

Proyectos asociados

TipoCódigoAcrónimoResponsableTítulo
Gobierno de EspañaCSD2009-0046RUESin especificarSin especificar
Gobierno de EspañaTEC2012-38247CAVESin especificarSin especificar

Más información

ID de Registro: 40785
Identificador DC: http://oa.upm.es/40785/
Identificador OAI: oai:oa.upm.es:40785
Identificador DOI: 10.1088/0268-1242/30/3/035015
URL Oficial: http://iopscience.iop.org/article/10.1088/0268-1242/30/3/035015/meta;jsessionid=583AC529BDA5D8A6F766CF07E7E7D1A0.c1.iopscience.cld.iop.org
Depositado por: Memoria Investigacion
Depositado el: 06 Sep 2016 16:27
Ultima Modificación: 06 Sep 2016 16:27
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