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Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy

Albert, Steven and Bengoechea Encabo, Ana and Kong, Xiang and Sánchez García, Miguel Ángel and Trampert, Achim and Calleja Pardo, Enrique (2015). Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy. "Crystal Growth & Design", v. 15 (n. 6); pp. 2661-2666. ISSN 1528-7483. https://doi.org/10.1021/cg501798j.

Description

Title: Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy
Author/s:
  • Albert, Steven
  • Bengoechea Encabo, Ana
  • Kong, Xiang
  • Sánchez García, Miguel Ángel
  • Trampert, Achim
  • Calleja Pardo, Enrique
Item Type: Article
Título de Revista/Publicación: Crystal Growth & Design
Date: 2015
Volume: 15
Subjects:
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

This work reports on the selective area growth mechanism of green-emitting InGaN/GaN nanocolumns. The evolution of the morphology of the InGaN segment is found to depend critically on the nominal III/V ratio as well as the diameter of the GaN section. In addition, the In distribution inside the InGaN segment is found to depend on the local III/V and In/Ga ratios.

Funding Projects

TypeCodeAcronymLeaderTitle
FP7GECCO 280694-2UnspecifiedUnspecifiedUnspecified
Government of SpainCAM/P2009/ESP- 1503UnspecifiedUnspecifiedUnspecified
Government of SpainMICINN MAT2011-26703UnspecifiedUnspecifiedUnspecified

More information

Item ID: 40859
DC Identifier: http://oa.upm.es/40859/
OAI Identifier: oai:oa.upm.es:40859
DOI: 10.1021/cg501798j
Official URL: http://pubs.acs.org/doi/abs/10.1021/cg501798j
Deposited by: Memoria Investigacion
Deposited on: 06 Sep 2016 17:07
Last Modified: 06 Sep 2016 17:07
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