Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate

Kong, Xiang and Albert, Steven and Bengoechea Encabo, Ana and Sánchez García, Miguel Angel and Calleja Pardo, Enrique and Calle Gómez, Fernando and Trampert, Achim (2015). Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate. "Physica Status Solidi A-Applications and materials science", v. 212 (n. 4); pp. 736-739. ISSN 1862-6300. https://doi.org/10.1002/pssa.201400198.

Description

Title: Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate
Author/s:
  • Kong, Xiang
  • Albert, Steven
  • Bengoechea Encabo, Ana
  • Sánchez García, Miguel Angel
  • Calleja Pardo, Enrique
  • Calle Gómez, Fernando
  • Trampert, Achim
Item Type: Article
Título de Revista/Publicación: Physica Status Solidi A-Applications and materials science
Date: 2015
Volume: 212
Subjects:
Freetext Keywords: Axial (In,Ga)N/GaN nanowire, lattice pulling effect, plastic strain relaxation, transmission electron microscopy
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Transmission electron microscopy and spatially resolved electron energy-loss spectroscopy have been applied to investigate the indium distribution and the interface morphology in axial (In,Ga)N/GaN nanowire heterostructures. The ordered axial (In,Ga)N/GaN nanowire heterostructures with an indium concentration up to 80% are grown by molecular beam epitaxy on GaN-buffered Si(111) substrates. We observed a pronounced lattice pulling effect in all the nanowire samples given in a broad transition region at the interface. The lattice pulling effect becomes smaller and the (In,Ga)N/GaN interface width is reduced as the indium concentration is increased in the (In,Ga)N section. The result can be interpreted in terms of the increased plastic strain relaxation via the generation of the misfit dislocations at the interface.

More information

Item ID: 40867
DC Identifier: http://oa.upm.es/40867/
OAI Identifier: oai:oa.upm.es:40867
DOI: 10.1002/pssa.201400198
Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pssa.201400198/abstract;jsessionid=6BBC3D5F07A52EEE46DF3FDD163046DF.f03t02
Deposited by: Memoria Investigacion
Deposited on: 06 Sep 2016 18:11
Last Modified: 06 Sep 2016 18:11
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