Post-CMOS compatible high-throughput fabrication of AIN-based piezoelectric microcantilevers

Pérez Campos, Ana; Fuentes Iriarte, Gonzalo; Hernando García, Jorge y Calle Gómez, Fernando (2015). Post-CMOS compatible high-throughput fabrication of AIN-based piezoelectric microcantilevers. "Journal of Micromechanics and Microengineering", v. 25 (n. 2); pp.. ISSN 0960-1317. https://doi.org/10.1088/0960-1317/25/2/025003.

Descripción

Título: Post-CMOS compatible high-throughput fabrication of AIN-based piezoelectric microcantilevers
Autor/es:
  • Pérez Campos, Ana
  • Fuentes Iriarte, Gonzalo
  • Hernando García, Jorge
  • Calle Gómez, Fernando
Tipo de Documento: Artículo
Título de Revista/Publicación: Journal of Micromechanics and Microengineering
Fecha: 2015
Volumen: 25
Materias:
Palabras Clave Informales: Microcantilevers, aluminum nitride, piezoelectric
Escuela: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Departamento: Otro
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

A post-complementary metal oxide semiconductor (CMOS) compatible microfabrication process of piezoelectric cantilevers has been developed. The fabrication process is suitable for standard silicon technology and provides low-cost and high-throughput manufacturing. This work reports design, fabrication and characterization of piezoelectric cantilevers based on aluminum nitride (AlN) thin films synthesized at room temperature. The proposed microcantilever system is a sandwich structure composed of chromium (Cr) electrodes and a sputtered AlN film. The key issue for cantilever fabrication is the growth at room temperature of the AlN layer by reactive sputtering, making possible the innovative compatibility of piezoelectric MEMS devices with CMOS circuits already processed. AlN and Cr have been etched by inductively coupled plasma (ICP) dry etching using a BCl3–Cl2–Ar plasma chemistry. As part of the novelty of the post-CMOS micromachining process presented here, a silicon Si (1 0 0) wafer has been used as substrate as well as the sacrificial layer used to release the microcantilevers. In order to achieve this, the Si surface underneath the structure has been wet etched using an HNA (hydrofluoric acid + nitric acid + acetic acid) based solution. X-ray diffraction (XRD) characterization indicated the high crystalline quality of the AlN film. An atomic force microscope (AFM) has been used to determine the Cr electrode surface roughness. The morphology of the fabricated devices has been studied by scanning electron microscope (SEM). The cantilevers have been piezoelectrically actuated and their out-of-plane vibration modes were detected by vibrometry.

Más información

ID de Registro: 40870
Identificador DC: http://oa.upm.es/40870/
Identificador OAI: oai:oa.upm.es:40870
Identificador DOI: 10.1088/0960-1317/25/2/025003
URL Oficial: http://iopscience.iop.org/article/10.1088/0960-1317/25/2/025003/meta;jsessionid=7EC008D9F4D1036884B3AA7BDF71929C.c2.iopscience.cld.iop.org
Depositado por: Memoria Investigacion
Depositado el: 07 Sep 2016 16:14
Ultima Modificación: 07 Sep 2016 16:14
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