Post-CMOS compatible high-throughput fabrication of AIN-based piezoelectric microcantilevers

Pérez Campos, Ana and Fuentes Iriarte, Gonzalo and Hernando García, Jorge and Calle Gómez, Fernando (2015). Post-CMOS compatible high-throughput fabrication of AIN-based piezoelectric microcantilevers. "Journal of Micromechanics and Microengineering", v. 25 (n. 2); pp.. ISSN 0960-1317. https://doi.org/10.1088/0960-1317/25/2/025003.

Description

Title: Post-CMOS compatible high-throughput fabrication of AIN-based piezoelectric microcantilevers
Author/s:
  • Pérez Campos, Ana
  • Fuentes Iriarte, Gonzalo
  • Hernando García, Jorge
  • Calle Gómez, Fernando
Item Type: Article
Título de Revista/Publicación: Journal of Micromechanics and Microengineering
Date: 2015
ISSN: 0960-1317
Volume: 25
Subjects:
Freetext Keywords: Microcantilevers, aluminum nitride, piezoelectric
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

A post-complementary metal oxide semiconductor (CMOS) compatible microfabrication process of piezoelectric cantilevers has been developed. The fabrication process is suitable for standard silicon technology and provides low-cost and high-throughput manufacturing. This work reports design, fabrication and characterization of piezoelectric cantilevers based on aluminum nitride (AlN) thin films synthesized at room temperature. The proposed microcantilever system is a sandwich structure composed of chromium (Cr) electrodes and a sputtered AlN film. The key issue for cantilever fabrication is the growth at room temperature of the AlN layer by reactive sputtering, making possible the innovative compatibility of piezoelectric MEMS devices with CMOS circuits already processed. AlN and Cr have been etched by inductively coupled plasma (ICP) dry etching using a BCl3–Cl2–Ar plasma chemistry. As part of the novelty of the post-CMOS micromachining process presented here, a silicon Si (1 0 0) wafer has been used as substrate as well as the sacrificial layer used to release the microcantilevers. In order to achieve this, the Si surface underneath the structure has been wet etched using an HNA (hydrofluoric acid + nitric acid + acetic acid) based solution. X-ray diffraction (XRD) characterization indicated the high crystalline quality of the AlN film. An atomic force microscope (AFM) has been used to determine the Cr electrode surface roughness. The morphology of the fabricated devices has been studied by scanning electron microscope (SEM). The cantilevers have been piezoelectrically actuated and their out-of-plane vibration modes were detected by vibrometry.

More information

Item ID: 40870
DC Identifier: http://oa.upm.es/40870/
OAI Identifier: oai:oa.upm.es:40870
DOI: 10.1088/0960-1317/25/2/025003
Official URL: http://iopscience.iop.org/article/10.1088/0960-1317/25/2/025003/meta;jsessionid=7EC008D9F4D1036884B3AA7BDF71929C.c2.iopscience.cld.iop.org
Deposited by: Memoria Investigacion
Deposited on: 07 Sep 2016 16:14
Last Modified: 07 Sep 2016 16:14
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