Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures

Bokov, P. Yu and Brazzini, Tommaso and Romero Rojo, Fátima and Calle Gómez, Fernando and Feneberg, Martin and Goldhahn, R. (2015). Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures. "Semiconductor Science and Technology", v. 30 (n. 8); pp. 1-6. ISSN 0268-1242. https://doi.org/10.1088/0268-1242/30/8/085014.

Description

Title: Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures
Author/s:
  • Bokov, P. Yu
  • Brazzini, Tommaso
  • Romero Rojo, Fátima
  • Calle Gómez, Fernando
  • Feneberg, Martin
  • Goldhahn, R.
Item Type: Article
Título de Revista/Publicación: Semiconductor Science and Technology
Date: 2015
ISSN: 0268-1242
Volume: 30
Subjects:
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

Full text

[img]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (1MB) | Preview

Abstract

Room temperature electroreflectance (ER) spectroscopy has been used to study the fundamental properties of AlxInyGa${}_{1-x-y}$N/AlN/GaN heterostructures under different applied bias. The (0001)-oriented heterostructures were grown by metal-organic vapor phase epitaxy on sapphire. The band gap energy of the AlxInyGa${}_{1-x-y}{\rm{N}}$ layers has been determined from analysis of the ER spectra using Aspnes' model. The obtained values are in good agreement with a nonlinear band gap interpolation equation proposed earlier. Bias-dependent ER allows one to determine the sheet carrier density of the two-dimensional electron gas and the barrier field strength.

Funding Projects

TypeCodeAcronymLeaderTitle
FP7213238RAINBOWUnspecifiedHigh quality Material and intrinsic Properties of InN and indium rich Nitride Alloys - (The RAINBOW ITN)
Government of SpainCSD2009–00046RUEUnspecifiedUnspecified
Government of SpainTEC2012–38247CAVEUnspecifiedUnspecified

More information

Item ID: 40871
DC Identifier: http://oa.upm.es/40871/
OAI Identifier: oai:oa.upm.es:40871
DOI: 10.1088/0268-1242/30/8/085014
Official URL: http://iopscience.iop.org/article/10.1088/0268-1242/30/8/085014/meta
Deposited by: Memoria Investigacion
Deposited on: 07 Sep 2016 16:24
Last Modified: 05 Jun 2019 16:35
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM