Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors

Guzmán, Álvaro de and Yamamoto, Kenji and Ulloa Herrero, José María and Llorens Molina, Juan Antonio and Hierro Cano, Adrián (2015). Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors. "Applied Physics Letters", v. 107 (n. 1); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.4926364.

Description

Title: Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors
Author/s:
  • Guzmán, Álvaro de
  • Yamamoto, Kenji
  • Ulloa Herrero, José María
  • Llorens Molina, Juan Antonio
  • Hierro Cano, Adrián
Item Type: Article
Título de Revista/Publicación: Applied Physics Letters
Date: 2015
ISSN: 0003-6951
Volume: 107
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

InAs/GaAs1−xSbx Quantum Dot (QD) infrared photodetectors are analyzed by photocurrent spectroscopy. We observe that the integrated responsivity of the devices is improved with the increasing Sb mole fraction in the capping layer, up to 4.2 times for x = 17%. Since the QD layers are not vertically aligned, the vertical transport of the carriers photogenerated within the QDs takes place mainly through the bulk material and the wetting layer of the additional QD regions. The lower thickness of the wetting layer for high Sb contents results in a reduced capture probability of the photocarriers, thus increasing the photoconductive gain and hence, the responsivity of the device. The growth of not vertically aligned consecutive QD layers with a thinner wetting layer opens a possibility to improve the performance of quantum dot infrared photodetectors.

Funding Projects

TypeCodeAcronymLeaderTitle
Madrid Regional GovernmentS2013/MAE-2780MADRID-PVUnspecifiedMateriales, dispositivos y tecnología para el desarrollo de la industria fotovoltaica
Government of SpainMAT2013-47102-C2-2-RUnspecifiedUnspecifiedUnspecified
Government of SpainENE2012-37804-C02-02UnspecifiedUnspecifiedUnspecified
Government of SpainAIC-B-2011-0806UnspecifiedUnspecifiedUnspecified

More information

Item ID: 40872
DC Identifier: http://oa.upm.es/40872/
OAI Identifier: oai:oa.upm.es:40872
DOI: 10.1063/1.4926364
Official URL: http://scitation.aip.org/content/aip/journal/apl/107/1/10.1063/1.4926364
Deposited by: Memoria Investigacion
Deposited on: 02 Jul 2016 10:34
Last Modified: 05 Jun 2019 16:39
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