Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11(2)over-bar2) GaN templates

Niehle, M. and Trampert, Achim and Albert, Steven and Bengoechea Encabo, Ana and Calleja Pardo, Enrique (2015). Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11(2)over-bar2) GaN templates. "APL Materials", v. 3 (n. 3); pp.. ISSN 2166-532X. https://doi.org/10.1063/1.4914102.

Description

Title: Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11(2)over-bar2) GaN templates
Author/s:
  • Niehle, M.
  • Trampert, Achim
  • Albert, Steven
  • Bengoechea Encabo, Ana
  • Calleja Pardo, Enrique
Item Type: Article
Título de Revista/Publicación: APL Materials
Date: 2015
Volume: 3
Subjects:
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs) that grew uniformly inclined towards the patterned, semi-polar GaN( 112̄ 2 ) substrate surface by molecular beam epitaxy. For the practical realization of the tomographic experiment, the nanocolumn axis has been aligned parallel to the rotation axis of the electron microscope goniometer. The tomographic reconstruction allows for the determination of the three-dimensional indium distribution inside the nanocolumns. This distribution is strongly interrelated with the nanocolumn morphology and faceting. The (In,Ga)N layer thickness and the indium concentration differ between crystallographically equivalent and non-equivalent facets. The largest thickness and the highest indium concentration are found at the nanocolumn apex parallel to the basal planes.

More information

Item ID: 40873
DC Identifier: http://oa.upm.es/40873/
OAI Identifier: oai:oa.upm.es:40873
DOI: 10.1063/1.4914102
Official URL: http://scitation.aip.org/content/aip/journal/aplmater/3/3/10.1063/1.4914102
Deposited by: Memoria Investigacion
Deposited on: 05 Sep 2016 16:51
Last Modified: 05 Sep 2016 16:51
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