Electro-optical characterization of IC compatible microcantilevers

Pérez Campos, Ana and Fuentes Iriarte, Gonzalo and Lebedev, V. and Calle Gómez, Fernando (2015). Electro-optical characterization of IC compatible microcantilevers. "Microsystem Technologies" ; pp. 1-20. ISSN 0946-7076. https://doi.org/10.1007/s00542-015-2629-x.


Title: Electro-optical characterization of IC compatible microcantilevers
  • Pérez Campos, Ana
  • Fuentes Iriarte, Gonzalo
  • Lebedev, V.
  • Calle Gómez, Fernando
Item Type: Article
Título de Revista/Publicación: Microsystem Technologies
Date: 2015
ISSN: 0946-7076
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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The aim of this work is to simulate and optically characterize the piezoelectric performance of complementary metal oxide semiconductor (CMOS) compatible microcantilevers based on aluminium nitride (AlN) and manufactured at room temperature. This study should facilitate the integration of piezoelectric micro-electro-mechanical systems (MEMS) such as microcantilevers, in CMOS technology. Besides compatibility with standard integrated circuit manufacturing procedures, low temperature processing also translates into higher throughput and, as a consequence, lower manufacturing costs. Thus, the use of the piezoelectric properties of AlN manufactured by reactive sputtering at room temperature is an important step towards the integration of this type of devices within future CMOS technology standards. To assess the reliability of our fabrication process, we have manufactured arrays of free-standing microcantilever beams of variable dimension and studied their piezoelectric performance. The characterization of the first out-of-plane modes of AlN-actuated piezoelectric microcantilevers has been carried out using two optical techniques: laser Doppler vibrometry (LDV) and white light interferometry (WLI). In order to actuate the cantilevers, a periodic chirp signal in certain frequency ranges was applied between the device electrodes. The nature of the different vibration modes detected has been studied and compared with that obtained by a finite element model based simulation (COMSOL Multiphysics), showing flexural as well as torsional modes. The correspondence between theoretical and experimental data is reasonably good, probing the viability of this high throughput and CMOS compatible fabrication process. To complete the study, X-ray diffraction as well as d33 piezoelectric coefficient measurements were also carried out.

Funding Projects

Government of SpainTEC2010-19511UnspecifiedUnspecifiedUnspecified

More information

Item ID: 40909
DC Identifier: http://oa.upm.es/40909/
OAI Identifier: oai:oa.upm.es:40909
DOI: 10.1007/s00542-015-2629-x
Official URL: http://link.springer.com/article/10.1007/s00542-015-2629-x
Deposited by: Memoria Investigacion
Deposited on: 07 Sep 2016 16:42
Last Modified: 05 Jun 2019 17:14
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