Electro-optical characterization of IC compatible microcantilevers

Pérez Campos, Ana; Fuentes Iriarte, Gonzalo; Lebedev, V. y Calle Gómez, Fernando (2015). Electro-optical characterization of IC compatible microcantilevers. "Microsystem Technologies" ; pp. 1-20. ISSN 0946-7076. https://doi.org/10.1007/s00542-015-2629-x.


Título: Electro-optical characterization of IC compatible microcantilevers
  • Pérez Campos, Ana
  • Fuentes Iriarte, Gonzalo
  • Lebedev, V.
  • Calle Gómez, Fernando
Tipo de Documento: Artículo
Título de Revista/Publicación: Microsystem Technologies
Fecha: 2015
Escuela: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Departamento: Otro
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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The aim of this work is to simulate and optically characterize the piezoelectric performance of complementary metal oxide semiconductor (CMOS) compatible microcantilevers based on aluminium nitride (AlN) and manufactured at room temperature. This study should facilitate the integration of piezoelectric micro-electro-mechanical systems (MEMS) such as microcantilevers, in CMOS technology. Besides compatibility with standard integrated circuit manufacturing procedures, low temperature processing also translates into higher throughput and, as a consequence, lower manufacturing costs. Thus, the use of the piezoelectric properties of AlN manufactured by reactive sputtering at room temperature is an important step towards the integration of this type of devices within future CMOS technology standards. To assess the reliability of our fabrication process, we have manufactured arrays of free-standing microcantilever beams of variable dimension and studied their piezoelectric performance. The characterization of the first out-of-plane modes of AlN-actuated piezoelectric microcantilevers has been carried out using two optical techniques: laser Doppler vibrometry (LDV) and white light interferometry (WLI). In order to actuate the cantilevers, a periodic chirp signal in certain frequency ranges was applied between the device electrodes. The nature of the different vibration modes detected has been studied and compared with that obtained by a finite element model based simulation (COMSOL Multiphysics), showing flexural as well as torsional modes. The correspondence between theoretical and experimental data is reasonably good, probing the viability of this high throughput and CMOS compatible fabrication process. To complete the study, X-ray diffraction as well as d33 piezoelectric coefficient measurements were also carried out.

Proyectos asociados

Gobierno de EspañaTEC2010-19511Sin especificarMinisterio de Educación y CienciaSin especificar

Más información

ID de Registro: 40909
Identificador DC: http://oa.upm.es/40909/
Identificador OAI: oai:oa.upm.es:40909
Identificador DOI: 10.1007/s00542-015-2629-x
URL Oficial: http://link.springer.com/article/10.1007/s00542-015-2629-x
Depositado por: Memoria Investigacion
Depositado el: 07 Sep 2016 16:42
Ultima Modificación: 07 Sep 2016 16:42
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