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Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology
Citation
Llorens Molina, Juan Antonio and Wewior, L. and Cardozo de Oliveira, E.R. and Ulloa Herrero, José María and Utrilla Lomas, Antonio David and Fernández González, Alvaro de Guzmán and Hierro Cano, Adrián and Alén Millán, Benito (2015). Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology. "Applied Physics Letters", v. 107 (n. 18); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.4934841.
Description
| Title: | Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology |
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| Author/s: |
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| Item Type: | Article |
| Título de Revista/Publicación: | Applied Physics Letters |
| Date: | November 2015 |
| ISSN: | 0003-6951 |
| Volume: | 107 |
| Subjects: | |
| Faculty: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
| Department: | Otro |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole moments and largely decoupled exciton recombination and ionization dynamics. We also predicted a bias regime where the hole wavefunction topology changes continuously from quantum dot-like to quantum ring-like as a function of the external bias. All these properties have great potential in advanced electro-optical applications and in the investigation of fundamental spin-orbit phenomena.
Funding Projects
| Type | Code | Acronym | Leader | Title |
|---|---|---|---|---|
| Government of Spain | ENE2012-37804-C02-02 | Unspecified | Unspecified | Unspecified |
| Government of Spain | TEC2011-29120-C05-04 | Unspecified | Unspecified | Unspecified |
| Government of Spain | MAT2013-47102-C2-2-R | Unspecified | Unspecified | Unspecified |
| Madrid Regional Government | S2013/MAE-2780 | Unspecified | Unspecified | Unspecified |
More information
| Item ID: | 40924 |
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| DC Identifier: | http://oa.upm.es/40924/ |
| OAI Identifier: | oai:oa.upm.es:40924 |
| DOI: | 10.1063/1.4934841 |
| Official URL: | http://scitation.aip.org/content/aip/journal/apl/107/18/10.1063/1.4934841 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 07 Sep 2016 16:49 |
| Last Modified: | 05 Jun 2019 17:49 |
