Analysis of the behavior of multijunction solar cells under high irradiance Gaussian light profiles showing chromatic aberration with emphasis on tunnel junction performance

Espinet González, Pilar and Rey-Stolle Prado, Ignacio and Algora del Valle, Carlos and García Vara, Iván (2015). Analysis of the behavior of multijunction solar cells under high irradiance Gaussian light profiles showing chromatic aberration with emphasis on tunnel junction performance. "Progress in Photovoltaics", v. 23 ; pp. 743-753. ISSN 1062-7995. https://doi.org/10.1002/pip.2491.

Description

Title: Analysis of the behavior of multijunction solar cells under high irradiance Gaussian light profiles showing chromatic aberration with emphasis on tunnel junction performance
Author/s:
  • Espinet González, Pilar
  • Rey-Stolle Prado, Ignacio
  • Algora del Valle, Carlos
  • García Vara, Iván
Item Type: Article
Título de Revista/Publicación: Progress in Photovoltaics
Date: June 2015
ISSN: 1062-7995
Volume: 23
Subjects:
Freetext Keywords: Tunnel junction; CPV; concentration; multijunction; solar cells; simulation; photovoltaics
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

In this work, we explain the behavior of multijunction solar cells under non-uniform (spatially and in spectral content) light profiles in general and in particular when Gaussian light profiles cause a photo-generated current density, which exceeds locally the peak current density of the tunnel junction. We have analyzed the implications on the tunnel junction's limitation, that is, in the loss of efficiency due to the appearance of a dip in the I–V curve. For that, we have carried out simulations with our three-dimensional distributed model for multijunction solar cells, which contemplates a full description of the tunnel junction and also takes into account the lateral resistances in the tunnel junction. The main findings are that the current density photo-generated spreads out through the lateral resistances of the device, mainly through the tunnel junction layers and the back contact. Therefore, under non-uniform light profiles these resistances are determinant not only to avoid the tunnel junction's limitation but also for mitigating losses in the fill factor. Therefore, taking into account these lateral resistances could be the key for jointly optimizing the concentrator photovoltaic system (concentrator optics, front grid layout and semiconductor structure)

Funding Projects

TypeCodeAcronymLeaderTitle
FP7283798NGCPVUNIVERSIDAD POLITECNICA DE MADRIDA new generation of concentrator photovoltaic cells, modules and systems
Government of SpainTEC2012-37286UnspecifiedUnspecifiedUnspecified
Government of SpainIPT-2011-1408-420000UnspecifiedUnspecifiedUnspecified
Madrid Regional GovernmentS2009/ENE1477NUMANCIA IIUnspecifiedUnspecified
Government of SpainTEC2011-28639-C02-01UnspecifiedUnspecifiedUnspecified
Government of SpainIPT- 2011-1441-920000UnspecifiedUnspecifiedUnspecified

More information

Item ID: 40980
DC Identifier: http://oa.upm.es/40980/
OAI Identifier: oai:oa.upm.es:40980
DOI: 10.1002/pip.2491
Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pip.2491/abstract
Deposited by: Memoria Investigacion
Deposited on: 25 Jun 2016 08:30
Last Modified: 06 Jun 2019 12:51
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