Analysis of the behavior of multijunction solar cells under high irradiance Gaussian light profiles showing chromatic aberration with emphasis on tunnel junction performance

Espinet González, Pilar; Rey-Stolle Prado, Ignacio; Algora del Valle, Carlos y García Vara, Iván (2015). Analysis of the behavior of multijunction solar cells under high irradiance Gaussian light profiles showing chromatic aberration with emphasis on tunnel junction performance. "Progress in Photovoltaics", v. 23 ; pp. 743-753. ISSN 1062-7995. https://doi.org/10.1002/pip.2491.

Descripción

Título: Analysis of the behavior of multijunction solar cells under high irradiance Gaussian light profiles showing chromatic aberration with emphasis on tunnel junction performance
Autor/es:
  • Espinet González, Pilar
  • Rey-Stolle Prado, Ignacio
  • Algora del Valle, Carlos
  • García Vara, Iván
Tipo de Documento: Artículo
Título de Revista/Publicación: Progress in Photovoltaics
Fecha: Junio 2015
Volumen: 23
Materias:
Palabras Clave Informales: Tunnel junction; CPV; concentration; multijunction; solar cells; simulation; photovoltaics
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

In this work, we explain the behavior of multijunction solar cells under non-uniform (spatially and in spectral content) light profiles in general and in particular when Gaussian light profiles cause a photo-generated current density, which exceeds locally the peak current density of the tunnel junction. We have analyzed the implications on the tunnel junction's limitation, that is, in the loss of efficiency due to the appearance of a dip in the I–V curve. For that, we have carried out simulations with our three-dimensional distributed model for multijunction solar cells, which contemplates a full description of the tunnel junction and also takes into account the lateral resistances in the tunnel junction. The main findings are that the current density photo-generated spreads out through the lateral resistances of the device, mainly through the tunnel junction layers and the back contact. Therefore, under non-uniform light profiles these resistances are determinant not only to avoid the tunnel junction's limitation but also for mitigating losses in the fill factor. Therefore, taking into account these lateral resistances could be the key for jointly optimizing the concentrator photovoltaic system (concentrator optics, front grid layout and semiconductor structure)

Proyectos asociados

TipoCódigoAcrónimoResponsableTítulo
FP7283798NGCPVUNIVERSIDAD POLITECNICA DE MADRIDA new generation of concentrator photovoltaic cells, modules and systems
Gobierno de EspañaTEC2012-37286Sin especificarSin especificarSin especificar
Gobierno de EspañaIPT-2011-1408-420000Sin especificarSin especificarSin especificar
Comunidad de MadridS2009/ENE1477Sin especificarSin especificarSin especificar
Gobierno de EspañaTEC2011-28639-C02-01Sin especificarSin especificarSin especificar
Gobierno de EspañaIPT- 2011-1441-920000Sin especificarSin especificarSin especificar

Más información

ID de Registro: 40980
Identificador DC: http://oa.upm.es/40980/
Identificador OAI: oai:oa.upm.es:40980
Identificador DOI: 10.1002/pip.2491
URL Oficial: http://onlinelibrary.wiley.com/doi/10.1002/pip.2491/abstract
Depositado por: Memoria Investigacion
Depositado el: 25 Jun 2016 08:30
Ultima Modificación: 01 Ago 2016 22:30
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