Effect of electrically inactive posphorus versus electrically active phosphorus oniron gettering

Peral Boiza, Ana and Dastgheib-Shirazi, Amir and Wagner, Hannes and Hahn, Giso and Cañizo Nadal, Carlos del (2015). Effect of electrically inactive posphorus versus electrically active phosphorus oniron gettering. "Energy Procedia", v. 77 ; pp. 311-315. ISSN 1876-6102. https://doi.org/10.1016/j.egypro.2015.07.044.

Description

Title: Effect of electrically inactive posphorus versus electrically active phosphorus oniron gettering
Author/s:
  • Peral Boiza, Ana
  • Dastgheib-Shirazi, Amir
  • Wagner, Hannes
  • Hahn, Giso
  • Cañizo Nadal, Carlos del
Item Type: Article
Título de Revista/Publicación: Energy Procedia
Date: 2015
ISSN: 1876-6102
Volume: 77
Subjects:
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

In this study we investigate the efficacy of iron gettering as a function of electrically inactive phosphorus in the emitter in combination with low temperature annealing steps. To achieve different amounts of electrically inactive phosphorus in the emitter a highly doped PSG produced emitter with a large plateau depth of electrical active phosphorus is etched back stepwise by a wet-chemical procedure. Therewith we achieve a gradual reduction in electrically inactive phosphorus with small changes in electrically active phosphorus (?Rsh < 4 ?/sq). After this step, the wafers with different emitters have been annealed at 700 °C for 30 min and the content of Feiin the bulk has been measured using QSS-PC. The results show, (i) that for higher amounts of electrically inactive phosphorusa stronger iron gettering effect can be observed and (ii) that an additional annealing step leads to a significant change of Fei. This means, (i) that anelectricallyinactive phosphorus concentration dependence for iron gettering is observed and (ii) additional annealing steps, below the usual diffusion temperature of phosphorus, can be used to reduce interstitial iron in highly contaminated wafers further.

Funding Projects

TypeCodeAcronymLeaderTitle
Madrid Regional GovernmentS2013/MAE-2780MADRID-PVUnspecifiedUnspecified
Government of SpainTEC2011-28423-C03UnspecifiedUnspecifiedUnspecified
Government of SpainEEBB-I-14-08268UnspecifiedUnspecifiedUnspecified

More information

Item ID: 41002
DC Identifier: http://oa.upm.es/41002/
OAI Identifier: oai:oa.upm.es:41002
DOI: 10.1016/j.egypro.2015.07.044
Official URL: http://www.sciencedirect.com/science/article/pii/S1876610215008127
Deposited by: Memoria Investigacion
Deposited on: 05 Sep 2016 18:12
Last Modified: 06 Jun 2019 13:02
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