Effects of the d-donor level of vanadium on the properties of Zn1-xVxO films

García Hemme, Eric and Yu, K and Wahnon Benarroch, Perla and González Díaz, Germán (2015). Effects of the d-donor level of vanadium on the properties of Zn1-xVxO films. "Applied Physics Letters", v. 106 (n. 18); pp. 182101-1. ISSN 0003-6951. https://doi.org/10.1063/1.4919791.

Description

Title: Effects of the d-donor level of vanadium on the properties of Zn1-xVxO films
Author/s:
  • García Hemme, Eric
  • Yu, K
  • Wahnon Benarroch, Perla
  • González Díaz, Germán
Item Type: Article
Título de Revista/Publicación: Applied Physics Letters
Date: 2015
ISSN: 0003-6951
Volume: 106
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnología Fotónica y Bioingeniería
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We report the effect of d-levels of vanadium atoms on the electronic band structure of ZnO. Polycrystalline layers of Zn 1−xVxO with 0 ≤ x ≤ 0.08 were synthesized using magnetron sputtering technique. Electrical measurements show that electron concentration increases with vanadium up to x == 0.04 and then decreases and films become insulating for x > 0.06. Optical characterization reveals that the absorption edge shifts to higher energy, while the photoluminescence (PL) peak shows a shift to lower energy with increasing vanadium content. This unusual optical behavior can be explained by an anticrossing interaction between the vanadium d-levels and the conduction band (CB) of ZnO. The interaction results in an upward shift of unoccupied CB ( E+E+ ) and the downward shift of the fully occupied E−E− band derived from the vanadium d-levels. The composition dependence of optical absorption edge ( E+E+ ) and PL peak ( E−E− ) can be fitted using the Band Anticrossing model with the vanadium d-level located at 0.13 eV below CB of ZnO and a coupling constant of 0.65 eV.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainTEC2013-41730-RUnspecifiedUnspecifiedUnspecified
Government of SpainENE2013-46624-C4-2UnspecifiedUnspecifiedUnspecified
Madrid Regional GovernmentP2013/MAE-2780MADRID-PVUnspecifiedUnspecified

More information

Item ID: 41003
DC Identifier: http://oa.upm.es/41003/
OAI Identifier: oai:oa.upm.es:41003
DOI: 10.1063/1.4919791
Official URL: http://scitation.aip.org/content/aip/journal/apl/106/18/10.1063/1.4919791
Deposited by: Memoria Investigacion
Deposited on: 01 Aug 2016 18:07
Last Modified: 06 Jun 2019 13:03
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