Experimental demonstration of the effect of field damping layers in quantum-dot intermediate band solar cells

Ramiro Gonzalez, Iñigo and Antolín Fernández, Elisa and Martí Vega, Antonio and Farmer, C.D. and Stanley, Colin and Luque López, Antonio (2015). Experimental demonstration of the effect of field damping layers in quantum-dot intermediate band solar cells. "Solar Energy Materials and Solar Cells", v. 140 ; pp. 299-305. ISSN 0927-0248. https://doi.org/10.1016/j.solmat.2015.04.029.

Description

Title: Experimental demonstration of the effect of field damping layers in quantum-dot intermediate band solar cells
Author/s:
  • Ramiro Gonzalez, Iñigo
  • Antolín Fernández, Elisa
  • Martí Vega, Antonio
  • Farmer, C.D.
  • Stanley, Colin
  • Luque López, Antonio
Item Type: Article
Título de Revista/Publicación: Solar Energy Materials and Solar Cells
Date: 2015
ISSN: 0927-0248
Volume: 140
Subjects:
Freetext Keywords: Intermediate band solar cell; Quantum dots; Tunnel escape; Solar cell characterization
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Intermediate band solar cells must demonstrate the principle of voltage preservation in order to achieve high conversion efficiencies. Tunnel escape of carriers has proved deleterious for this purpose in quantum dot intermediate band solar cells. In previous works, thick spacers between quantum dot layers were demonstrated as a means of reducing tunnel escape, but this approach is unrealistic if a large number of quantum dot layers have to be grown. In this work we report experimental proof that the use of field damping layers is equally effective at reducing tunnel carrier escape, by reducing the potential drop in the QD-stack and the associated electric field. Moreover, we demonstrate that the fact that tunnel carrier escape takes place under short-circuit conditions does not imply that voltage preservation cannot be achieved. We describe a theory that relates the evolution of the tunnel escape to bias voltage and the preservation of the voltage in an IBSC. Temperature and voltage-dependent quantum efficiency measurements, temperature dependent open-circuit voltage measurements and calculations of the internal electric field in IBSCs serve as the basis of the proposed theory.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainENE2012-37804-C02-01PROMESAUnspecifiedUnspecified

More information

Item ID: 41017
DC Identifier: http://oa.upm.es/41017/
OAI Identifier: oai:oa.upm.es:41017
DOI: 10.1016/j.solmat.2015.04.029
Official URL: http://www.sciencedirect.com/science/article/pii/S0927024815001907
Deposited by: Memoria Investigacion
Deposited on: 07 Sep 2016 18:11
Last Modified: 06 Jun 2019 13:26
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