Experimental demonstration of the effect of field damping layers in quantum-dot intermediate band solar cells

Ramiro Gonzalez, Iñigo; Antolín Fernández, Elisa; Martí Vega, Antonio; Farmer, C.D.; Stanley, Colin y Luque López, Antonio (2015). Experimental demonstration of the effect of field damping layers in quantum-dot intermediate band solar cells. "Solar Energy Materials and Solar Cells", v. 140 ; pp. 299-305. ISSN 0927-0248. https://doi.org/10.1016/j.solmat.2015.04.029.

Descripción

Título: Experimental demonstration of the effect of field damping layers in quantum-dot intermediate band solar cells
Autor/es:
  • Ramiro Gonzalez, Iñigo
  • Antolín Fernández, Elisa
  • Martí Vega, Antonio
  • Farmer, C.D.
  • Stanley, Colin
  • Luque López, Antonio
Tipo de Documento: Artículo
Título de Revista/Publicación: Solar Energy Materials and Solar Cells
Fecha: 2015
Volumen: 140
Materias:
Palabras Clave Informales: Intermediate band solar cell; Quantum dots; Tunnel escape; Solar cell characterization
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Otro
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Intermediate band solar cells must demonstrate the principle of voltage preservation in order to achieve high conversion efficiencies. Tunnel escape of carriers has proved deleterious for this purpose in quantum dot intermediate band solar cells. In previous works, thick spacers between quantum dot layers were demonstrated as a means of reducing tunnel escape, but this approach is unrealistic if a large number of quantum dot layers have to be grown. In this work we report experimental proof that the use of field damping layers is equally effective at reducing tunnel carrier escape, by reducing the potential drop in the QD-stack and the associated electric field. Moreover, we demonstrate that the fact that tunnel carrier escape takes place under short-circuit conditions does not imply that voltage preservation cannot be achieved. We describe a theory that relates the evolution of the tunnel escape to bias voltage and the preservation of the voltage in an IBSC. Temperature and voltage-dependent quantum efficiency measurements, temperature dependent open-circuit voltage measurements and calculations of the internal electric field in IBSCs serve as the basis of the proposed theory.

Proyectos asociados

TipoCódigoAcrónimoResponsableTítulo
Gobierno de EspañaENE2012-37804-C02-01Sin especificarSin especificarSin especificar

Más información

ID de Registro: 41017
Identificador DC: http://oa.upm.es/41017/
Identificador OAI: oai:oa.upm.es:41017
Identificador DOI: 10.1016/j.solmat.2015.04.029
URL Oficial: http://www.sciencedirect.com/science/article/pii/S0927024815001907
Depositado por: Memoria Investigacion
Depositado el: 07 Sep 2016 18:11
Ultima Modificación: 07 Sep 2016 18:11
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