The influence of Ga composition of GaInAsN QDs on N incorporation.

Gargallo Caballero, Raquel and Fernández González, Alvaro de Guzmán and Ulloa Herrero, José María and Hopkinson, M. and Muñoz Merino, Elias (2009). The influence of Ga composition of GaInAsN QDs on N incorporation.. In: "7th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces", 21/04/2008-24/04/2008, Marsella, Francia. ISBN ISSN 1369-8001.

Description

Title: The influence of Ga composition of GaInAsN QDs on N incorporation.
Author/s:
  • Gargallo Caballero, Raquel
  • Fernández González, Alvaro de Guzmán
  • Ulloa Herrero, José María
  • Hopkinson, M.
  • Muñoz Merino, Elias
Item Type: Presentation at Congress or Conference (Article)
Event Title: 7th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces
Event Dates: 21/04/2008-24/04/2008
Event Location: Marsella, Francia
Title of Book: Materials science in semiconductor processing. Proceedings of 7th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces
Date: 2009
ISBN: ISSN 1369-8001
Volume: 12, Is
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Currently, dilute nitride III-N-As semiconductors, such as InGaAsN/GaAs quantum well material system, allow to develop very competitive lasers at long wavelength emission (1.3 µm). However, longer wavelengths, such as 1.55 µm, are very difficult to achieve without making worse the performance of the device. Alternatively, as it is well known, great efforts are being devoted to the study of dilute nitride III-N-As quantum dots (QDs) semiconductor [1]. Mainly, this is due to the attractive advantages that they show over other materials and structures: the strong reduction in the bandgap of the III-As semiconductor by adding even a few percent of nitrogen into them, and the interesting physical properties that the QDs offer to laser characteristics (e.g. low threshold current, etc)

More information

Item ID: 4102
DC Identifier: http://oa.upm.es/4102/
OAI Identifier: oai:oa.upm.es:4102
Deposited by: Memoria Investigacion
Deposited on: 28 Mar 2011 10:10
Last Modified: 20 Apr 2016 13:27
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