Heterojunction Band Offset Limitations on Open-Circuit Voltage in p-ZnTe/n-ZnSe Solar Cells

Teran, A. and Chen, C. and López, E. and Linares, P.G. and Artacho Huertas, Irene and Martí Vega, Antonio and Luque López, Antonio and Phillips, J.D. (2015). Heterojunction Band Offset Limitations on Open-Circuit Voltage in p-ZnTe/n-ZnSe Solar Cells. "IEEE Journal of Photovoltaics", v. 5 (n. 3); pp. 874-877. ISSN 2156-3381. https://doi.org/10.1109/JPHOTOV.2015.2411057.

Description

Title: Heterojunction Band Offset Limitations on Open-Circuit Voltage in p-ZnTe/n-ZnSe Solar Cells
Author/s:
  • Teran, A.
  • Chen, C.
  • López, E.
  • Linares, P.G.
  • Artacho Huertas, Irene
  • Martí Vega, Antonio
  • Luque López, Antonio
  • Phillips, J.D.
Item Type: Article
Título de Revista/Publicación: IEEE Journal of Photovoltaics
Date: 2015
Volume: 5
Subjects:
Freetext Keywords: Heterojunction solar cell, open-circuit voltage, zinc selenide (ZnSe), zinc telluride (ZnTe)
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Limitations on the open-circuit voltage of p-ZnTe/n-ZnSe heterojunction solar cells are studied via current-voltage (I-V) measurements under solar concentration and at variable temperature. The open-circuit voltage reaches a maximum value of 1.95 V at 77 K and 199 suns. The open-circuit voltage shows good agreement with the calculated built-in potential of 2.00 V at 77 K. These results suggest that the open-circuit voltage is limited by heterojunction band offsets associated with the type-II heterojunction band lineup, rather than the bandgap energy of the ZnTe absorber material.

More information

Item ID: 41020
DC Identifier: http://oa.upm.es/41020/
OAI Identifier: oai:oa.upm.es:41020
DOI: 10.1109/JPHOTOV.2015.2411057
Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7066904
Deposited by: Memoria Investigacion
Deposited on: 14 Jun 2016 18:12
Last Modified: 14 Jun 2016 18:12
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