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Heterojunction Band Offset Limitations on Open-Circuit Voltage in p-ZnTe/n-ZnSe Solar Cells
Cita
Teran, A.; Chen, C.; López, E.; Linares, P.G.; Artacho Huertas, Irene; Martí Vega, Antonio; Luque López, Antonio y Phillips, J.D. (2015). Heterojunction Band Offset Limitations on Open-Circuit Voltage in p-ZnTe/n-ZnSe Solar Cells. "IEEE Journal of Photovoltaics", v. 5 (n. 3); pp. 874-877. ISSN 2156-3381. https://doi.org/10.1109/JPHOTOV.2015.2411057.
Descripción
| Título: | Heterojunction Band Offset Limitations on Open-Circuit Voltage in p-ZnTe/n-ZnSe Solar Cells |
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| Autor/es: |
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| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | IEEE Journal of Photovoltaics |
| Fecha: | 2015 |
| Volumen: | 5 |
| Materias: | |
| Palabras Clave Informales: | Heterojunction solar cell, open-circuit voltage, zinc selenide (ZnSe), zinc telluride (ZnTe) |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Electrónica Física |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
Limitations on the open-circuit voltage of p-ZnTe/n-ZnSe heterojunction solar cells are studied via current-voltage (I-V) measurements under solar concentration and at variable temperature. The open-circuit voltage reaches a maximum value of 1.95 V at 77 K and 199 suns. The open-circuit voltage shows good agreement with the calculated built-in potential of 2.00 V at 77 K. These results suggest that the open-circuit voltage is limited by heterojunction band offsets associated with the type-II heterojunction band lineup, rather than the bandgap energy of the ZnTe absorber material.
Más información
| ID de Registro: | 41020 |
|---|---|
| Identificador DC: | http://oa.upm.es/41020/ |
| Identificador OAI: | oai:oa.upm.es:41020 |
| Identificador DOI: | 10.1109/JPHOTOV.2015.2411057 |
| URL Oficial: | http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7066904 |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 14 Jun 2016 18:12 |
| Ultima Modificación: | 14 Jun 2016 18:12 |
