Strategies to unblock the n-GaAs surface when electrodepositing Bi from acidic solutions

Prados, Alicia and Ranchal Sánchez, Rocío and Pérez García, Lucas (2015). Strategies to unblock the n-GaAs surface when electrodepositing Bi from acidic solutions. "Electrochimica Acta", v. 174 ; pp. 264-267. ISSN 0013-4686. https://doi.org/10.1016/j.electacta.2015.05.188.

Description

Title: Strategies to unblock the n-GaAs surface when electrodepositing Bi from acidic solutions
Author/s:
  • Prados, Alicia
  • Ranchal Sánchez, Rocío
  • Pérez García, Lucas
Item Type: Article
Título de Revista/Publicación: Electrochimica Acta
Date: August 2015
ISSN: 0013-4686
Volume: 174
Subjects:
Freetext Keywords: Electrodeposition; thin films; semiconducting substrate; hydrogen adsorption; hydrogen desorption
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Bismuth ultra-thin films grown on n-GaAs electrodes via electrodeposition are porous due to a blockade of the electrode surface caused by adsorbed hydrogen when using acidic electrolytes. In this study, we discuss the existence of two sources of hydrogen adsorption and we propose different routes to unblock the n-GaAs surface in order to improve Bi films compactness. Firstly, we demonstrate that increasing the electrolyte temperature provides compact yet polycrystalline Bi films. Cyclic voltammetry scans indicate that this low crystal quality might be a result of the incorporation of Bi hydroxides within the Bi film as a result of the temperature increase. Secondly, we have illuminated the semiconductor surface to take advantage of photogenerated holes. These photocarriers oxidize the adsorbed hydrogen unblocking the surface, but also create pits at the substrate surface that degrade the Bi/GaAs interface and prevent an epitaxial growth. Finally, we show that performing a cyclic voltammetry scan before electrodeposition enables the growth of compact Bi ultra-thin films of high crystallinity on semiconductor substrates with a doping level low enough to perform transport measurements.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainMAT2011-28751-C02Ministerio de Economía y CompetitividadUnspecifiedUnspecified

More information

Item ID: 41164
DC Identifier: http://oa.upm.es/41164/
OAI Identifier: oai:oa.upm.es:41164
DOI: 10.1016/j.electacta.2015.05.188
Official URL: http://www.sciencedirect.com/science/article/pii/S0013468615013535
Deposited by: Memoria Investigacion
Deposited on: 28 Jun 2016 17:13
Last Modified: 01 Sep 2017 22:30
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