Electronic aspects of formation and properties of local structures around Mn in Cd1−xMnxTe1−ySey

Radisavljevic, Ivana; Novakovic, Nikola; Romcevic, Nebojsa; Mitric, Miodrag; Kuzmanovic, Bojana; Bojanic Antonijevic, Slobodan y Ivanovic, Nenad (2015). Electronic aspects of formation and properties of local structures around Mn in Cd1−xMnxTe1−ySey. "Materials Chemistry and Physics", v. 167 ; pp. 236-245. ISSN 0254-0584. https://doi.org/10.1016/j.matchemphys.2015.10.038.

Descripción

Título: Electronic aspects of formation and properties of local structures around Mn in Cd1−xMnxTe1−ySey
Autor/es:
  • Radisavljevic, Ivana
  • Novakovic, Nikola
  • Romcevic, Nebojsa
  • Mitric, Miodrag
  • Kuzmanovic, Bojana
  • Bojanic Antonijevic, Slobodan
  • Ivanovic, Nenad
Tipo de Documento: Artículo
Título de Revista/Publicación: Materials Chemistry and Physics
Fecha: Noviembre 2015
Volumen: 167
Materias:
Palabras Clave Informales: Semiconductors, XAFS, Ab initio calculations, Electronic structure
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Ingeniería Electrónica
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Local electronic and structural features around Mn in Cd1−xMnxTe0.97Se0.03 (x = 0.02; 0.05; 0.1; y = 0.03) were studied by means of X-ray Absorption Fine Structure (XAFS) techniques. Manganese ions with an average valence 2+, are found to be well incorporated into the host CdTe lattice, with clear preference for Te atoms as the first neighbors. However, Mn and Te are found to form two essentially different types of bonds, one short, strong and directional (cubic MnTe-alike bond), and three much longer, predominantly ionic in nature (hexagonal MnTe-alike bonds), thereby distorting the tetrahedral coordination around Mn. The origin of peculiar Mn–Te bonds distribution and details of their nature and strength are further elaborated by employing the first principle electronic structure calculations. That way a thorough insight in impact of the Mn–Te bond length variation on the electronic structure of the compound is obtained. The relations established between the local structures and electronic properties offer a reliable procedure for detailed analysis of the structural and electronic consequences of the 3d-transition metals (TM) incorporation in II–VI semiconductor host. Clear distinction between various influences makes the procedure easily adoptable also to the studies of TM impurities in other semiconductors.

Más información

ID de Registro: 41446
Identificador DC: http://oa.upm.es/41446/
Identificador OAI: oai:oa.upm.es:41446
Identificador DOI: 10.1016/j.matchemphys.2015.10.038
URL Oficial: http://www.sciencedirect.com/science/article/pii/S0254058415303989
Depositado por: Memoria Investigacion
Depositado el: 10 Jul 2016 08:22
Ultima Modificación: 01 Dic 2017 23:30
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