Electronic aspects of formation and properties of local structures around Mn in Cd1−xMnxTe1−ySey

Radisavljevic, Ivana and Novakovic, Nikola and Romcevic, Nebojsa and Mitric, Miodrag and Kuzmanovic, Bojana and Bojanic Antonijevic, Slobodan and Ivanovic, Nenad (2015). Electronic aspects of formation and properties of local structures around Mn in Cd1−xMnxTe1−ySey. "Materials Chemistry and Physics", v. 167 ; pp. 236-245. ISSN 0254-0584. https://doi.org/10.1016/j.matchemphys.2015.10.038.

Description

Title: Electronic aspects of formation and properties of local structures around Mn in Cd1−xMnxTe1−ySey
Author/s:
  • Radisavljevic, Ivana
  • Novakovic, Nikola
  • Romcevic, Nebojsa
  • Mitric, Miodrag
  • Kuzmanovic, Bojana
  • Bojanic Antonijevic, Slobodan
  • Ivanovic, Nenad
Item Type: Article
Título de Revista/Publicación: Materials Chemistry and Physics
Date: November 2015
ISSN: 0254-0584
Volume: 167
Subjects:
Freetext Keywords: Semiconductors, XAFS, Ab initio calculations, Electronic structure
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Local electronic and structural features around Mn in Cd1−xMnxTe0.97Se0.03 (x = 0.02; 0.05; 0.1; y = 0.03) were studied by means of X-ray Absorption Fine Structure (XAFS) techniques. Manganese ions with an average valence 2+, are found to be well incorporated into the host CdTe lattice, with clear preference for Te atoms as the first neighbors. However, Mn and Te are found to form two essentially different types of bonds, one short, strong and directional (cubic MnTe-alike bond), and three much longer, predominantly ionic in nature (hexagonal MnTe-alike bonds), thereby distorting the tetrahedral coordination around Mn. The origin of peculiar Mn–Te bonds distribution and details of their nature and strength are further elaborated by employing the first principle electronic structure calculations. That way a thorough insight in impact of the Mn–Te bond length variation on the electronic structure of the compound is obtained. The relations established between the local structures and electronic properties offer a reliable procedure for detailed analysis of the structural and electronic consequences of the 3d-transition metals (TM) incorporation in II–VI semiconductor host. Clear distinction between various influences makes the procedure easily adoptable also to the studies of TM impurities in other semiconductors.

Funding Projects

TypeCodeAcronymLeaderTitle
FP7226716ELISAUnspecifiedEuropean Light Sources Activities - Synchrotrons and Free Electron Lasers

More information

Item ID: 41446
DC Identifier: http://oa.upm.es/41446/
OAI Identifier: oai:oa.upm.es:41446
DOI: 10.1016/j.matchemphys.2015.10.038
Official URL: http://www.sciencedirect.com/science/article/pii/S0254058415303989
Deposited by: Memoria Investigacion
Deposited on: 10 Jul 2016 08:22
Last Modified: 07 Jun 2019 16:07
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