Effect of annealing in the Sb and In distribution of type II GaAsSb-capped InAs quantum dots

Reyes, D.F.; Ulloa Herrero, José María; Fernández González, Alvaro de Guzmán; Hierro Cano, Adrián; Sales, D.L.; Beanland, R.; Sánchez, A.M. y González, D. (2015). Effect of annealing in the Sb and In distribution of type II GaAsSb-capped InAs quantum dots. "Semiconductor Science and Technology", v. 30 (n. 11); pp. 1-9. ISSN 0268-1242. https://doi.org/10.1088/0268-1242/30/11/114006.

Descripción

Título: Effect of annealing in the Sb and In distribution of type II GaAsSb-capped InAs quantum dots
Autor/es:
  • Reyes, D.F.
  • Ulloa Herrero, José María
  • Fernández González, Alvaro de Guzmán
  • Hierro Cano, Adrián
  • Sales, D.L.
  • Beanland, R.
  • Sánchez, A.M.
  • González, D.
Tipo de Documento: Artículo
Título de Revista/Publicación: Semiconductor Science and Technology
Fecha: 2015
Volumen: 30
Materias:
Palabras Clave Informales: III-V quantum dots, GaAsSb, Sb distribution, Strain state, annealed, TEM
Escuela: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Departamento: Otro
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Type II emission optoelectronic devices using GaAsSb strain reduction layers (SRL) over InAs quantum dots (QDs) have aroused great interest. Recent studies have demonstrated an extraordinary increase in photoluminescence (PL) intensity maintaining type II emission after a rapid thermal anneal (RTA), but with an undesirable blueshift. In this work, we have characterized the effect of RTA on InAs/GaAs QDs embedded in a SRL of GaAsSb by transmission electron microscopy (TEM) and finite element simulations. We find that annealing alters both the distribution of Sb in the SRL as well as the exchange of cations (In and Ga) between the QDs and the SRL. First, annealing causes modifications in the capping layer, reducing its thickness but maintaining the maximum Sb content and improving its homogeneity. In addition, the formation of Sb-rich clusters with loop dislocations is noticed, which seems not to be an impediment for an increased PL intensity. Second, RTA produces flatter QDs with larger base diameter and induces a more homogeneous QD height distribution. The Sb is accumulated over the QDs and the RTA enlarges the Sb-rich region, but the Sb contents are very similar. This fact leaves the type II alignment without major changes. Atomic-scale strain analysis of the nanostructures reveal a strong intermixing of In/Ga between the QDs and the capping layer, which is the main responsible mechanism of the PL blueshift. The improvement of the crystalline quality of the capping layer together with higher homogeneity QD sizes could be the origin of the enhancement of the PL emission.

Proyectos asociados

TipoCódigoAcrónimoResponsableTítulo
Gobierno de EspañaMAT2010-15206Sin especificarSin especificarSin especificar
Gobierno de EspañaMAT2013- 47102-C2Sin especificarSin especificarSin especificar
Gobierno de EspañaSCCYT-UCASin especificarSin especificarSin especificar

Más información

ID de Registro: 41477
Identificador DC: http://oa.upm.es/41477/
Identificador OAI: oai:oa.upm.es:41477
Identificador DOI: 10.1088/0268-1242/30/11/114006
URL Oficial: http://iopscience.iop.org/article/10.1088/0268-1242/30/11/114006/meta
Depositado por: Memoria Investigacion
Depositado el: 07 Sep 2016 17:04
Ultima Modificación: 01 Nov 2016 23:30
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