Design flexibility of ultra-high efficiency 4-junction inverted metamorphic solar cells

France, Ryan M.; Geisz, John F.; García Vara, Iván; Steiner, Myles A.; McMahon, William E.; Friedman, Daniel J.; Moriarty, Tom E.; Osterwald, Carl R.; Ward, J. Scott; Duda, Anna; Young, Michelle y Olavarria, Waldo J. (2015). Design flexibility of ultra-high efficiency 4-junction inverted metamorphic solar cells. En: "42nd Photovoltaic Specialist Conference (PVSC 2015)", 14/06/2015 - 19/06/2015, New Orleans, LA, EE.UU. pp. 1-3. https://doi.org/10.1109/PVSC.2015.7356439.

Descripción

Título: Design flexibility of ultra-high efficiency 4-junction inverted metamorphic solar cells
Autor/es:
  • France, Ryan M.
  • Geisz, John F.
  • García Vara, Iván
  • Steiner, Myles A.
  • McMahon, William E.
  • Friedman, Daniel J.
  • Moriarty, Tom E.
  • Osterwald, Carl R.
  • Ward, J. Scott
  • Duda, Anna
  • Young, Michelle
  • Olavarria, Waldo J.
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 42nd Photovoltaic Specialist Conference (PVSC 2015)
Fechas del Evento: 14/06/2015 - 19/06/2015
Lugar del Evento: New Orleans, LA, EE.UU
Título del Libro: 42nd Photovoltaic Specialist Conference (PVSC 2015)
Fecha: 2015
Materias:
Palabras Clave Informales: 4-junction solar cells, inverted metamorphic multijunction
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

We present recent improvements to the 4-junction inverted metamorphic solar cell. The device now includes a (Ga)InAsP buffer that transitions to lattice constants greater than InP, which allows access to GaInAs subcells with bandgaps < 0.74 eV and an additional 2 mA/cm2 of bottom junction photocurrent at AM1.5D. However, the optimal design depends on the spectrum and operating temperature. We show how the device flexibility can be used to fine-tune the design for various spectra in order to maximize energy yield for a given operating condition. 1-sun devices achieve 35.3% efficiency under the AM0 spectrum and 37.8% efficiency under the global spectrum at 25°C. Concentrator devices achieve 45.7% peak efficiency under 234x the direct spectrum and maintain over 45% efficiency at 700x at 25°C. Other device improvements include a 4-layer anti-reflection coating with low power loss, and reduced series resistance.

Más información

ID de Registro: 41914
Identificador DC: http://oa.upm.es/41914/
Identificador OAI: oai:oa.upm.es:41914
Identificador DOI: 10.1109/PVSC.2015.7356439
Depositado por: Memoria Investigacion
Depositado el: 30 Jul 2016 09:06
Ultima Modificación: 30 Jul 2016 09:06
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