Design flexibility of ultra-high efficiency 4-junction inverted metamorphic solar cells

France, Ryan M. and Geisz, John F. and García Vara, Iván and Steiner, Myles A. and McMahon, William E. and Friedman, Daniel J. and Moriarty, Tom E. and Osterwald, Carl R. and Ward, J. Scott and Duda, Anna and Young, Michelle and Olavarria, Waldo J. (2015). Design flexibility of ultra-high efficiency 4-junction inverted metamorphic solar cells. In: "42nd Photovoltaic Specialist Conference (PVSC 2015)", 14/06/2015 - 19/06/2015, New Orleans, LA, EE.UU. pp. 1-3. https://doi.org/10.1109/PVSC.2015.7356439.

Description

Title: Design flexibility of ultra-high efficiency 4-junction inverted metamorphic solar cells
Author/s:
  • France, Ryan M.
  • Geisz, John F.
  • García Vara, Iván
  • Steiner, Myles A.
  • McMahon, William E.
  • Friedman, Daniel J.
  • Moriarty, Tom E.
  • Osterwald, Carl R.
  • Ward, J. Scott
  • Duda, Anna
  • Young, Michelle
  • Olavarria, Waldo J.
Item Type: Presentation at Congress or Conference (Article)
Event Title: 42nd Photovoltaic Specialist Conference (PVSC 2015)
Event Dates: 14/06/2015 - 19/06/2015
Event Location: New Orleans, LA, EE.UU
Title of Book: 42nd Photovoltaic Specialist Conference (PVSC 2015)
Date: 2015
Subjects:
Freetext Keywords: 4-junction solar cells, inverted metamorphic multijunction
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We present recent improvements to the 4-junction inverted metamorphic solar cell. The device now includes a (Ga)InAsP buffer that transitions to lattice constants greater than InP, which allows access to GaInAs subcells with bandgaps < 0.74 eV and an additional 2 mA/cm2 of bottom junction photocurrent at AM1.5D. However, the optimal design depends on the spectrum and operating temperature. We show how the device flexibility can be used to fine-tune the design for various spectra in order to maximize energy yield for a given operating condition. 1-sun devices achieve 35.3% efficiency under the AM0 spectrum and 37.8% efficiency under the global spectrum at 25°C. Concentrator devices achieve 45.7% peak efficiency under 234x the direct spectrum and maintain over 45% efficiency at 700x at 25°C. Other device improvements include a 4-layer anti-reflection coating with low power loss, and reduced series resistance.

More information

Item ID: 41914
DC Identifier: http://oa.upm.es/41914/
OAI Identifier: oai:oa.upm.es:41914
DOI: 10.1109/PVSC.2015.7356439
Deposited by: Memoria Investigacion
Deposited on: 30 Jul 2016 09:06
Last Modified: 30 Jul 2016 09:06
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