Effects of 10 MeV proton irradiation on III-V solar cells

Yaccuzzi, E.; Ochoa Gómez, Mario; Barrera, Marcelo; Barrigón Montañés, Enrique; Rodríguez, S.; Espinet González, Pilar; Ibarra, M. L.; García, J.; Godfrin, E. M.; Alurralde, M.; Rubinelli, F.; Algora del Valle, Carlos; Rey Llorente, Ignacio del y Plá, J. (2015). Effects of 10 MeV proton irradiation on III-V solar cells. En: "31st European Photovoltaic Solar Energy Conference and Exhibition", 14/09/2015 - 18/09/2015, Hamburg, Germany. pp. 1439-1443.

Descripción

Título: Effects of 10 MeV proton irradiation on III-V solar cells
Autor/es:
  • Yaccuzzi, E.
  • Ochoa Gómez, Mario
  • Barrera, Marcelo
  • Barrigón Montañés, Enrique
  • Rodríguez, S.
  • Espinet González, Pilar
  • Ibarra, M. L.
  • García, J.
  • Godfrin, E. M.
  • Alurralde, M.
  • Rubinelli, F.
  • Algora del Valle, Carlos
  • Rey Llorente, Ignacio del
  • Plá, J.
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 31st European Photovoltaic Solar Energy Conference and Exhibition
Fechas del Evento: 14/09/2015 - 18/09/2015
Lugar del Evento: Hamburg, Germany
Título del Libro: 31st European Photovoltaic Solar Energy Conference and Exhibition
Fecha: 2015
Materias:
Palabras Clave Informales: Radiation Damage, III-V Semiconductors, Space Cells, Concentrator Cell
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

In this work we present our latest results and analysis of a 10 MeV proton irradiation experiment performed on III-V solar cells. A set of representative devices were irradiated for different fluences, including latticematched GaInP/GaInAs/Ge triple junction, GaInP/Ge double junction, and GaAs and Ge single junction solar cells. The methodology applied included the irradiation of two devices of each type; for a better control of the measurements, non-irradiated devices with the same characteristics of those irradiated were used as reference. The devices were monitored before and after each exposure by in-situ characterization of the electrical response under dark and under illumination using a solar simulator connected to the irradiation chamber through a borosilicate glass window. Ex-situ characterization techniques included dark and 1 sun AM0 illumination I-V curve and external quantum efficiency measurements. Furthermore, results of the numerical simulation of devices with D-AMPS-1D code are presented in order to give a physical interpretation of the results. DLTS spectroscopy preliminary results for single junction GaAs cells are also presented.

Proyectos asociados

TipoCódigoAcrónimoResponsableTítulo
Gobierno de EspañaES/11/04Sin especificarSin especificarFabrication, characterization, simulation and test on solar cells based on III-V semiconductors

Más información

ID de Registro: 41915
Identificador DC: http://oa.upm.es/41915/
Identificador OAI: oai:oa.upm.es:41915
Depositado por: Memoria Investigacion
Depositado el: 10 Sep 2016 08:36
Ultima Modificación: 10 Sep 2016 08:36
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