Effects of 10 MeV proton irradiation on III-V solar cells

Yaccuzzi, E. and Ochoa Gómez, Mario and Barrera, Marcelo and Barrigón Montañés, Enrique and Rodríguez, S. and Espinet González, Pilar and Ibarra, M. L. and García, J. and Godfrin, E. M. and Alurralde, M. and Rubinelli, F. and Algora del Valle, Carlos and Rey Llorente, Ignacio del and Plá, J. (2015). Effects of 10 MeV proton irradiation on III-V solar cells. In: "31st European Photovoltaic Solar Energy Conference and Exhibition", 14/09/2015 - 18/09/2015, Hamburg, Germany. pp. 1439-1443.

Description

Title: Effects of 10 MeV proton irradiation on III-V solar cells
Author/s:
  • Yaccuzzi, E.
  • Ochoa Gómez, Mario
  • Barrera, Marcelo
  • Barrigón Montañés, Enrique
  • Rodríguez, S.
  • Espinet González, Pilar
  • Ibarra, M. L.
  • García, J.
  • Godfrin, E. M.
  • Alurralde, M.
  • Rubinelli, F.
  • Algora del Valle, Carlos
  • Rey Llorente, Ignacio del
  • Plá, J.
Item Type: Presentation at Congress or Conference (Article)
Event Title: 31st European Photovoltaic Solar Energy Conference and Exhibition
Event Dates: 14/09/2015 - 18/09/2015
Event Location: Hamburg, Germany
Title of Book: 31st European Photovoltaic Solar Energy Conference and Exhibition
Date: 2015
Subjects:
Freetext Keywords: Radiation Damage, III-V Semiconductors, Space Cells, Concentrator Cell
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

In this work we present our latest results and analysis of a 10 MeV proton irradiation experiment performed on III-V solar cells. A set of representative devices were irradiated for different fluences, including latticematched GaInP/GaInAs/Ge triple junction, GaInP/Ge double junction, and GaAs and Ge single junction solar cells. The methodology applied included the irradiation of two devices of each type; for a better control of the measurements, non-irradiated devices with the same characteristics of those irradiated were used as reference. The devices were monitored before and after each exposure by in-situ characterization of the electrical response under dark and under illumination using a solar simulator connected to the irradiation chamber through a borosilicate glass window. Ex-situ characterization techniques included dark and 1 sun AM0 illumination I-V curve and external quantum efficiency measurements. Furthermore, results of the numerical simulation of devices with D-AMPS-1D code are presented in order to give a physical interpretation of the results. DLTS spectroscopy preliminary results for single junction GaAs cells are also presented.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainES/11/04UnspecifiedUnspecifiedFabrication, characterization, simulation and test on solar cells based on III-V semiconductors

More information

Item ID: 41915
DC Identifier: http://oa.upm.es/41915/
OAI Identifier: oai:oa.upm.es:41915
Deposited by: Memoria Investigacion
Deposited on: 10 Sep 2016 08:36
Last Modified: 10 Sep 2016 08:36
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