Evolution of the silicon bottom cell photovoltaic behavior during III-V on Si multi-junction solar cells production

Garcia Tabares Valdivieso, Elisa; Grassman, T. J.; Martín Martín, Diego; Carlin, J.; Rey Llorente, Ignacio del y Ringel, Steven A. (2015). Evolution of the silicon bottom cell photovoltaic behavior during III-V on Si multi-junction solar cells production. En: "42nd Photovoltaic Specialist Conference (PVSC 2015)", 14/06/2015 - 19/06/2015, New Orleans, LA, EE.UU. pp. 1-6.

Descripción

Título: Evolution of the silicon bottom cell photovoltaic behavior during III-V on Si multi-junction solar cells production
Autor/es:
  • Garcia Tabares Valdivieso, Elisa
  • Grassman, T. J.
  • Martín Martín, Diego
  • Carlin, J.
  • Rey Llorente, Ignacio del
  • Ringel, Steven A.
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 42nd Photovoltaic Specialist Conference (PVSC 2015)
Fechas del Evento: 14/06/2015 - 19/06/2015
Lugar del Evento: New Orleans, LA, EE.UU
Título del Libro: 42nd Photovoltaic Specialist Conference (PVSC 2015)
Fecha: 2015
Materias:
Palabras Clave Informales: Minority carrier lifetime, III-V on Si, MJSC, bottom cell
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

The evolution of the Si bulk minority carrier lifetime during the heteroepitaxial growth of III-V on Si multi-junction solar cell structures via metal-organic vapor phase epitaxy has been analyzed. Initially, the emitter formation produces important lifetime degradation. Nevertheless, a progressive recovery was observed during the growth of the metamorphic GaAsP/Si structure. A step-wise mechanism has been proposed to explain the lifetime evolution observed during this process. The initial lifetime degradation is believed to be related to the formation of thermally-induced defects within the Si bulk. These defects are subsequently passivated by fast-diffusing atomic hydrogen -coming from precursor (i.e. PH3 and AsH3) pyrolysis- during the subsequent III-V growth. These results indicate that the MOVPE environment used to create the III-V/Si solar cell structures has a dynamic impact on the minority carrier lifetime. Consequently, designing processes that promote the recovery of the lifetime is a must to support the production of high-quality III-V/Si solar cells.

Proyectos asociados

TipoCódigoAcrónimoResponsableTítulo
FP7283798NGCPVUNIVERSIDAD POLITECNICA DE MADRIDA new generation of concentrator photovoltaic cells, modules and systems
Gobierno de EspañaTEC2012-37286Sin especificarSin especificarFabricación por MOVPE de células solares multiunion de semiconductores iii-v sobre silicio

Más información

ID de Registro: 41916
Identificador DC: http://oa.upm.es/41916/
Identificador OAI: oai:oa.upm.es:41916
URL Oficial: http://ieeexplore.ieee.org/document/7356380/?reload=true&arnumber=7356380
Depositado por: Memoria Investigacion
Depositado el: 10 Sep 2016 08:45
Ultima Modificación: 10 Sep 2016 08:45
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