Evolution of the silicon bottom cell photovoltaic behavior during III-V on Si multi-junction solar cells production

Garcia Tabares Valdivieso, Elisa and Grassman, T. J. and Martín Martín, Diego and Carlin, J. and Rey Llorente, Ignacio del and Ringel, Steven A. (2015). Evolution of the silicon bottom cell photovoltaic behavior during III-V on Si multi-junction solar cells production. In: "42nd Photovoltaic Specialist Conference (PVSC 2015)", 14/06/2015 - 19/06/2015, New Orleans, LA, EE.UU. pp. 1-6.

Description

Title: Evolution of the silicon bottom cell photovoltaic behavior during III-V on Si multi-junction solar cells production
Author/s:
  • Garcia Tabares Valdivieso, Elisa
  • Grassman, T. J.
  • Martín Martín, Diego
  • Carlin, J.
  • Rey Llorente, Ignacio del
  • Ringel, Steven A.
Item Type: Presentation at Congress or Conference (Article)
Event Title: 42nd Photovoltaic Specialist Conference (PVSC 2015)
Event Dates: 14/06/2015 - 19/06/2015
Event Location: New Orleans, LA, EE.UU
Title of Book: 42nd Photovoltaic Specialist Conference (PVSC 2015)
Date: 2015
Subjects:
Freetext Keywords: Minority carrier lifetime, III-V on Si, MJSC, bottom cell
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The evolution of the Si bulk minority carrier lifetime during the heteroepitaxial growth of III-V on Si multi-junction solar cell structures via metal-organic vapor phase epitaxy has been analyzed. Initially, the emitter formation produces important lifetime degradation. Nevertheless, a progressive recovery was observed during the growth of the metamorphic GaAsP/Si structure. A step-wise mechanism has been proposed to explain the lifetime evolution observed during this process. The initial lifetime degradation is believed to be related to the formation of thermally-induced defects within the Si bulk. These defects are subsequently passivated by fast-diffusing atomic hydrogen -coming from precursor (i.e. PH3 and AsH3) pyrolysis- during the subsequent III-V growth. These results indicate that the MOVPE environment used to create the III-V/Si solar cell structures has a dynamic impact on the minority carrier lifetime. Consequently, designing processes that promote the recovery of the lifetime is a must to support the production of high-quality III-V/Si solar cells.

Funding Projects

TypeCodeAcronymLeaderTitle
FP7283798NGCPVUNIVERSIDAD POLITECNICA DE MADRIDA new generation of concentrator photovoltaic cells, modules and systems
Government of SpainTEC2012-37286UnspecifiedUnspecifiedFabricación por MOVPE de células solares multiunion de semiconductores iii-v sobre silicio

More information

Item ID: 41916
DC Identifier: http://oa.upm.es/41916/
OAI Identifier: oai:oa.upm.es:41916
Official URL: http://ieeexplore.ieee.org/document/7356380/?reload=true&arnumber=7356380
Deposited by: Memoria Investigacion
Deposited on: 10 Sep 2016 08:45
Last Modified: 10 Sep 2016 08:45
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