GaAs(Sb)(N)-caped InAs/GaAs Quantum Dots for enhanced solar cell efficiency

Utrilla Lomas, Antonio David and Ulloa Herrero, José María and Gacevic, Zarko and Reyes, D.F. and González, D. and Ben, T. and Fernández González, Alvaro de Guzmán and Hierro Cano, Adrián (2015). GaAs(Sb)(N)-caped InAs/GaAs Quantum Dots for enhanced solar cell efficiency. In: "18th European Molecular Beam Epitaxy (EUROMBE 2015)", 15/03/2015 - 18/03/2015, Canazei, Italy. pp..

Description

Title: GaAs(Sb)(N)-caped InAs/GaAs Quantum Dots for enhanced solar cell efficiency
Author/s:
  • Utrilla Lomas, Antonio David
  • Ulloa Herrero, José María
  • Gacevic, Zarko
  • Reyes, D.F.
  • González, D.
  • Ben, T.
  • Fernández González, Alvaro de Guzmán
  • Hierro Cano, Adrián
Item Type: Presentation at Congress or Conference (Article)
Event Title: 18th European Molecular Beam Epitaxy (EUROMBE 2015)
Event Dates: 15/03/2015 - 18/03/2015
Event Location: Canazei, Italy
Title of Book: 18th European Molecular Beam Epitaxy (EUROMBE 2015)
Date: 2015
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Recently, quantum dots (QDs) have been drawing an increasing interest as an alternative approach to enhance solar cell efficiency. Multiple-exciton generation in zero-dimensional structures, the possibility to implement intermediate-band solar cells , or the introduction of sub-band-gap states are some of the benefits from using QDs. Indeed, the use of InAs QDs has been demonstrated to extend the photoresponse of bulk GaAs and higher short- circuit currents have already been obtained. The use of a modified capping layer (CL), particularly GaAs(Sb)(N), is expected to further extend the photoresponse from InAs QDs, allowing besides that an independent control of the hole and electron confinement and therefore of their respective escape times.

More information

Item ID: 41987
DC Identifier: http://oa.upm.es/41987/
OAI Identifier: oai:oa.upm.es:41987
Deposited by: Memoria Investigacion
Deposited on: 03 Sep 2016 10:19
Last Modified: 03 Sep 2016 10:19
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