Mechanically stacked four-junction concentrator solar cells

Steiner, Myles A.; Geisz, John F.; Ward, J. Scott; García Vara, Iván; Friedman, Daniel J.; King, Richard R.; Chiu, Philip T.; France, Ryan M.; Duda, Anna; Olavarria, Waldo J.; Young, Michelle y Kurtz, Sarah R. (2015). Mechanically stacked four-junction concentrator solar cells. En: "42nd Photovoltaic Specialist Conference (PVSC 2015)", 14/06/2015 - 19/06/2015, New Orleans, LA, EE.UU. pp. 1-3. https://doi.org/10.1109/PVSC.2015.7356151.

Descripción

Título: Mechanically stacked four-junction concentrator solar cells
Autor/es:
  • Steiner, Myles A.
  • Geisz, John F.
  • Ward, J. Scott
  • García Vara, Iván
  • Friedman, Daniel J.
  • King, Richard R.
  • Chiu, Philip T.
  • France, Ryan M.
  • Duda, Anna
  • Olavarria, Waldo J.
  • Young, Michelle
  • Kurtz, Sarah R.
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 42nd Photovoltaic Specialist Conference (PVSC 2015)
Fechas del Evento: 14/06/2015 - 19/06/2015
Lugar del Evento: New Orleans, LA, EE.UU
Título del Libro: 42nd Photovoltaic Specialist Conference (PVSC 2015)
Fecha: 2015
Materias:
Palabras Clave Informales: III-V solar cell; Mechanical stack; Multijunction solar cell; Photon recycling
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Multijunction solar cells can be fabricated by bonding together component cells that are grown separately. Because the component cells are each grown lattice-matched to suitable substrates, this technique allows alloys of different lattice constants to be combined without the structural defects introduced when using metamorphic buffers. Here we present results on the fabrication and performance of four-junction mechanical stacks composed of GaInP/GaAs and GaInAsP/GaInAs tandems, grown on GaAs and InP substrates, respectively. The two tandems were bonded together with a lowindex, transparent epoxy that acts as an omni-directional reflector to the GaAs bandedge luminescence, while simultaneously transmitting nearly all of the sub-bandgap light. As determined by electroluminescence measurements and optical modeling, the GaAs subcell demonstrates a higher internal radiative limit and thus higher subcell voltage, compared with GaAs subcells without enhanced internal optics; all four subcells exhibit excellent material quality. The device was fabricated with four contact terminals so that each tandem can be operated at its maximum power point, which raises the cumulative efficiency and decreases spectral sensitivity. Efficiencies exceeding 38% at one-sun have been demonstrated. Eliminating the series resistance is the key challenge for the concentrator cells. We will discuss the performance of one-sun and concentrator versions of the device, and compare the results to recently fabricated monolithic four-junction cells.

Más información

ID de Registro: 42024
Identificador DC: http://oa.upm.es/42024/
Identificador OAI: oai:oa.upm.es:42024
Identificador DOI: 10.1109/PVSC.2015.7356151
Depositado por: Memoria Investigacion
Depositado el: 24 Jul 2016 11:28
Ultima Modificación: 24 Jul 2016 11:28
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