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Optimizing diffusion, morphology and minority carrier lifetime in silicon for GaAsP/Si dual-junction solar cells
Cita
Garcia Tabares Valdivieso, Elisa; Rey Llorente, Ignacio del y Martín Martín, Diego (2015). Optimizing diffusion, morphology and minority carrier lifetime in silicon for GaAsP/Si dual-junction solar cells. En: "10th Spanish Conference on Electron Devices (CDE 2015)", 11/02/2015 - 13/02/2015, Aranjuez, Madrid. pp. 1-4.
Descripción
| Título: | Optimizing diffusion, morphology and minority carrier lifetime in silicon for GaAsP/Si dual-junction solar cells |
|---|---|
| Autor/es: |
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| Tipo de Documento: | Ponencia en Congreso o Jornada (Artículo) |
| Título del Evento: | 10th Spanish Conference on Electron Devices (CDE 2015) |
| Fechas del Evento: | 11/02/2015 - 13/02/2015 |
| Lugar del Evento: | Aranjuez, Madrid |
| Título del Libro: | 10th Spanish Conference on Electron Devices (CDE 2015) |
| Fecha: | 2015 |
| Materias: | |
| Palabras Clave Informales: | III-V on Si, MJSCs, MOVPE, bottom cell |
| Escuela: | Instituto de Energía Solar (IES) (UPM) |
| Departamento: | Otro |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
Dual-junction solar cells formed by a GaAsP cell on a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic applications. In this study, we analyze several factors for the optimization of the bottom cell, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the growth of a high quality GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.
Proyectos asociados
| Tipo | Código | Acrónimo | Responsable | Título |
|---|---|---|---|---|
| FP7 | 283798 | NGCPV | UNIVERSIDAD POLITECNICA DE MADRID | A new generation of concentrator photovoltaic cells, modules and systems |
| Gobierno de España | TEC2012-37286 | Sin especificar | Sin especificar | Fabricación por MOVPE de células solares multiunion de semiconductores III-V sobre silicio |
Más información
| ID de Registro: | 42025 |
|---|---|
| Identificador DC: | http://oa.upm.es/42025/ |
| Identificador OAI: | oai:oa.upm.es:42025 |
| URL Oficial: | http://ieeexplore.ieee.org/document/7087512/?reload=true&arnumber=7087512 |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 10 Sep 2016 09:13 |
| Ultima Modificación: | 10 Sep 2016 09:13 |
