Selective Area Growth of III- Nitride Nanorods on polar, semi-polar and non-polar orientations: Device applications

Albert, S. and Bengoechea Encabo, Ana and López Romero, David and Mierry, Philippe de and Zuñiga Pérez, Jesús and Kong, Xiang and Trampert, Achim and Sánchez García, Miguel Ángel and Calleja Pardo, Enrique (2015). Selective Area Growth of III- Nitride Nanorods on polar, semi-polar and non-polar orientations: Device applications. In: "Quantum Sensing and Nanophotonic Devices XII", 08/02/2015 - 12/02/2015, San Francisco, California, USA. pp.. https://doi.org/10.1117/12.2085079.

Description

Title: Selective Area Growth of III- Nitride Nanorods on polar, semi-polar and non-polar orientations: Device applications
Author/s:
  • Albert, S.
  • Bengoechea Encabo, Ana
  • López Romero, David
  • Mierry, Philippe de
  • Zuñiga Pérez, Jesús
  • Kong, Xiang
  • Trampert, Achim
  • Sánchez García, Miguel Ángel
  • Calleja Pardo, Enrique
Item Type: Presentation at Congress or Conference (Article)
Event Title: Quantum Sensing and Nanophotonic Devices XII
Event Dates: 08/02/2015 - 12/02/2015
Event Location: San Francisco, California, USA
Title of Book: SPIE Proceedings
Date: 2015
Volume: 9370
Subjects:
Freetext Keywords: Selective area growth; nanostructures; InGaN; GaN; LED; photoluminescence; white-light emission; single color emission; core-shell; non-polar; semi-polar; pseudo substrates; coalescence
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The aim of this work is to provide an overview on the recent advances in the selective area growth of (In)GaN nanostructures by plasma assisted molecular beam epitaxy, focusing on their potential as building blocks for next generation light emitting diodes. The first two sections deal with the emission control in the entire ultraviolet to infrared range, including approaches for white light emission, using thick InGaN segments on axial nanocolumns. Selective area growth of axial nanostructures is developed on both GaN/sapphire templates and GaN-buffered Si(lll). Ordered arrays of InGaN/GaN light emitting diodes grown by molecular beam epitaxy, emitting in the blue (441 nm), green (502 nm), and yellow (568 nm) spectral range are reported. As an alternative to axial nanocolumns, section 3 reports on the growth and characterization of InGaN/GaN core-shell structures on an ordered array of top-down patterned GaN microrods. Finally, section 4 reports on the selective area growth of GaN, with and without InGaN insertion, on semi-polar (11-22) and non-polar (11-20) templates. Upon selective area growth the high defect density present in the semi-polar templates is strongly reduced as indicated by a dramatic improvement of the optical properties. In the case of selective area growth on non-polar (11-20) templates, the formation of nanostructures with a low aspect ratio took place allowing for the fabrication of high-quality, non-polar GaN pseudo-templates by coalescence of these nanostructures.

Funding Projects

TypeCodeAcronymLeaderTitle
FP7GECCO 280694-2UnspecifiedUnspecifiedUnspecified
Government of SpainCAM/P2009/ESP-1503UnspecifiedUnspecifiedUnspecified
Government of SpainMICrNNMAT2011-26703UnspecifiedUnspecifiedUnspecified

More information

Item ID: 42127
DC Identifier: http://oa.upm.es/42127/
OAI Identifier: oai:oa.upm.es:42127
DOI: 10.1117/12.2085079
Deposited by: Memoria Investigacion
Deposited on: 31 Jul 2016 11:44
Last Modified: 31 Jul 2016 11:44
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