Combined impact of heterogeneous lifetime and gettering on solar cell performance

Morishige, Ashley E. and Wagner, Hannes and Hofstetter, Jasmin and Avci, Ibrahim and Cañizo Nadal, Carlos del and Buonassisi, Tonio (2015). Combined impact of heterogeneous lifetime and gettering on solar cell performance. In: "5th International Conference on Silicon Photovoltaics, SiliconPV 2015", 23/03/2015 - 25/03/2015, Konstanz, Germany. pp. 119-128. https://doi.org/10.1016/j.egypro.2015.07.019.

Description

Title: Combined impact of heterogeneous lifetime and gettering on solar cell performance
Author/s:
  • Morishige, Ashley E.
  • Wagner, Hannes
  • Hofstetter, Jasmin
  • Avci, Ibrahim
  • Cañizo Nadal, Carlos del
  • Buonassisi, Tonio
Item Type: Presentation at Congress or Conference (Article)
Event Title: 5th International Conference on Silicon Photovoltaics, SiliconPV 2015
Event Dates: 23/03/2015 - 25/03/2015
Event Location: Konstanz, Germany
Title of Book: Energy Procedia
Date: August 2015
Volume: 77
Subjects:
Freetext Keywords: Efficiency; iron; lifetime; phosphorus diffusion gettering; photovoltaics; processing; Sentaurus TCAD; silicon; simulator; solar
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We couple numerical process and device simulations to provide a framework for understanding the combined effects of as-grown wafer impurity distribution, processing parameters, and solar cell architecture. For this study, we added the Impurity-to-Efficiency simulator to Synopsys. Sentaurus Process software using the Alagator Scripting Language. Our results quantify how advanced processing can eliminate differences in efficiency due to different as-grown impurity concentrations and due to different area fractions of defective wafer regions. We identify combinations of as-grown impurity distributions and process parameters that produce solar cells limited by point defects and those that are limited by precipitated impurities. Gettering targeted at either point defect or precipitate reduction can then be designed and applied to increase cell efficiency. We also visualize the post-processing iron and total recombination distributions in 2D maps of the wafer cross-section. PV researchers and companies can input their initial iron distributions and processing parameters into our software and couple the resulting process simulation results with a solar cell device design of interest to conduct their own analyses. The Alagator scripts we developed are freely available online at http://pv.miteduimpurity-to-efficiency-i2e-simulator-for-sentaurus-tcad/.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainTEC2011-28423-C03UnspecifiedUnspecifiedTecnologías industriales para módulos fotovoltaicos de alta eficiencia y bajo coste basados en células delgadas de silicio cristalino

More information

Item ID: 42128
DC Identifier: http://oa.upm.es/42128/
OAI Identifier: oai:oa.upm.es:42128
DOI: 10.1016/j.egypro.2015.07.019
Deposited by: Memoria Investigacion
Deposited on: 24 Jul 2016 09:08
Last Modified: 24 Jul 2016 09:08
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