Combined impact of heterogeneous lifetime and gettering on solar cell performance

Morishige, Ashley E.; Wagner, Hannes; Hofstetter, Jasmin; Avci, Ibrahim; Cañizo Nadal, Carlos del y Buonassisi, Tonio (2015). Combined impact of heterogeneous lifetime and gettering on solar cell performance. En: "5th International Conference on Silicon Photovoltaics, SiliconPV 2015", 23/03/2015 - 25/03/2015, Konstanz, Germany. pp. 119-128. https://doi.org/10.1016/j.egypro.2015.07.019.

Descripción

Título: Combined impact of heterogeneous lifetime and gettering on solar cell performance
Autor/es:
  • Morishige, Ashley E.
  • Wagner, Hannes
  • Hofstetter, Jasmin
  • Avci, Ibrahim
  • Cañizo Nadal, Carlos del
  • Buonassisi, Tonio
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 5th International Conference on Silicon Photovoltaics, SiliconPV 2015
Fechas del Evento: 23/03/2015 - 25/03/2015
Lugar del Evento: Konstanz, Germany
Título del Libro: Energy Procedia
Fecha: Agosto 2015
Volumen: 77
Materias:
Palabras Clave Informales: Efficiency; iron; lifetime; phosphorus diffusion gettering; photovoltaics; processing; Sentaurus TCAD; silicon; simulator; solar
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

We couple numerical process and device simulations to provide a framework for understanding the combined effects of as-grown wafer impurity distribution, processing parameters, and solar cell architecture. For this study, we added the Impurity-to-Efficiency simulator to Synopsys. Sentaurus Process software using the Alagator Scripting Language. Our results quantify how advanced processing can eliminate differences in efficiency due to different as-grown impurity concentrations and due to different area fractions of defective wafer regions. We identify combinations of as-grown impurity distributions and process parameters that produce solar cells limited by point defects and those that are limited by precipitated impurities. Gettering targeted at either point defect or precipitate reduction can then be designed and applied to increase cell efficiency. We also visualize the post-processing iron and total recombination distributions in 2D maps of the wafer cross-section. PV researchers and companies can input their initial iron distributions and processing parameters into our software and couple the resulting process simulation results with a solar cell device design of interest to conduct their own analyses. The Alagator scripts we developed are freely available online at http://pv.miteduimpurity-to-efficiency-i2e-simulator-for-sentaurus-tcad/.

Proyectos asociados

TipoCódigoAcrónimoResponsableTítulo
Gobierno de EspañaTEC2011-28423-C03Sin especificarSin especificarTecnologías industriales para módulos fotovoltaicos de alta eficiencia y bajo coste basados en células delgadas de silicio cristalino

Más información

ID de Registro: 42128
Identificador DC: http://oa.upm.es/42128/
Identificador OAI: oai:oa.upm.es:42128
Identificador DOI: 10.1016/j.egypro.2015.07.019
Depositado por: Memoria Investigacion
Depositado el: 24 Jul 2016 09:08
Ultima Modificación: 24 Jul 2016 09:08
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