Pretilt effect on a vertically aligned liquid crystal cell for optical displays

Tkachenko, Volodymyr; Abbate, Giancarlo; Marino, Antigone; Santamato, Enrico; Bennis, Noureddine; Quintana Arregui, Patxi Xabier y Otón Sánchez, José Manuel (2008). Pretilt effect on a vertically aligned liquid crystal cell for optical displays. En: "4th International Conference Advanced Optoelectronics and Lasers (CAOL 2008)", 29/09/2008-04/10/2008. ISBN 978-1-4244-1973-9.

Descripción

Título: Pretilt effect on a vertically aligned liquid crystal cell for optical displays
Autor/es:
  • Tkachenko, Volodymyr
  • Abbate, Giancarlo
  • Marino, Antigone
  • Santamato, Enrico
  • Bennis, Noureddine
  • Quintana Arregui, Patxi Xabier
  • Otón Sánchez, José Manuel
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 4th International Conference Advanced Optoelectronics and Lasers (CAOL 2008)
Fechas del Evento: 29/09/2008-04/10/2008
Título del Libro: Proceedings of 4th International Conference Advanced Optoelectronics and Lasers (CAOL 2008)
Fecha: 2008
ISBN: 978-1-4244-1973-9
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Tecnología Fotónica [hasta 2014]
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Vertical aligned (VA) mode liquid crystal (LC) cells are very popular in transmissive directview and reflective projection displays because of high contrast ratio and wide viewing angle. A nonzero pretilt angle is generally used to avoid domain formation during molecular reorientation by electric field, as well as to reduce both driving voltage and response time. On the other hand, increasing the pretilt the quality of the dark state will be reduced, and thus an optimal value of pretilt has to be sought. To this aim, even different pretilt values on the two surfaces, yielding an asymmetric tilt distribution, could be considered. The pretilt effect on electro-optical properties of a VA LC cell has been investigated. Pretilt was controlled changing the angle of SiOx deposition on the substrate surfaces [1]. We employed Variable Angle Spectroscopic Ellipsometry [2] to obtain the tilt angle distribution versus the applied voltage. Finally, we compared experimental findings with simulated data at different anchoring energies. The results will be discussed.

Más información

ID de Registro: 4226
Identificador DC: http://oa.upm.es/4226/
Identificador OAI: oai:oa.upm.es:4226
Depositado por: Memoria Investigacion
Depositado el: 23 Sep 2010 08:38
Ultima Modificación: 20 Abr 2016 13:32
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