High volume transfer of high viscosity silver pastes using Laser Direct-Write Processing for metallization of c-Si cells

Morales Furió, Miguel and Chen, Yu and Muñoz Martín, David and Lauzurica Santiago, Sara and Molpeceres Álvarez, Carlos Luis (2015). High volume transfer of high viscosity silver pastes using Laser Direct-Write Processing for metallization of c-Si cells. In: "Laser-based Micro- and Nanoprocessing IX", 07th February 2015, San Francisco (EEUU). pp. 1-7.

Description

Title: High volume transfer of high viscosity silver pastes using Laser Direct-Write Processing for metallization of c-Si cells
Author/s:
  • Morales Furió, Miguel
  • Chen, Yu
  • Muñoz Martín, David
  • Lauzurica Santiago, Sara
  • Molpeceres Álvarez, Carlos Luis
Item Type: Presentation at Congress or Conference (Other)
Event Title: Laser-based Micro- and Nanoprocessing IX
Event Dates: 07th February 2015
Event Location: San Francisco (EEUU)
Title of Book: Laser-based Micro- and Nanoprocessing IX
Date: 2015
Subjects:
Faculty: E.T.S.I. Industriales (UPM)
Department: Física Aplicada e Ingeniería de Materiales
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The main objective of this work is to adapt Laser Induced Forward Transfer (LIFT), a well-known laser direct writing technique for material transfer, to define metallic contacts (fingers and busbars) onto c-Si cells. A layer of a commercial silver paste (viscosity around 30-50 kcPs), with thickness in the order of tens of microns, is applied over a glass substrate using a coater.. The glass with the silver paste is set at a controlled gap over the c-Si cell. A solid state pulsed laser (532 nm) is focused on the glass/silver interface producing a droplet of silver that it is transferred to the acceptor substra.te The process parameters (silver paste thickness, gap and laser parameters -spot size, pulse energy and overlapping of pulses) are modified and the morphology of the voxels is studied using confocal microscopy. Long lines are printed with a scanner and their uniformity, width, and height are studied. Examples of metallization of large areas (up to 10 cm x 10 cm) over c-Si cells are presented.

Funding Projects

TypeCodeAcronymLeaderTitle
FP7FP7-2013-NMP-ICT-FOF. 609355APPOLOVALSTYBINIS MOKSLINIU TYRIMU INSTITUTAS FIZINIU IR TECHNOLOGIJOS MOKSLU CENTRASHub of Application Laboratories for Equipment Assessment in Laser Based Manufacturing
Government of SpainENE2011-23359UnspecifiedUnspecifiedSimulación de procesos laser en la industria fotovoltaica
Government of SpainENE2013-48629-C4-3-RUnspecifiedUnspecifiedCélulas solares de silicio de alta eficiencia y bajo coste fabricadas a baja temperatura

More information

Item ID: 42299
DC Identifier: http://oa.upm.es/42299/
OAI Identifier: oai:oa.upm.es:42299
Deposited by: Memoria Investigacion
Deposited on: 29 Jun 2016 15:52
Last Modified: 21 Aug 2017 11:50
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