Effects of CuO additives and sol-gel technique on NiNb2O6 dielectric ceramics for LTCC application

You, Chaoyu y Zhang, Ying-Chun (2016). Effects of CuO additives and sol-gel technique on NiNb2O6 dielectric ceramics for LTCC application. "Journal of Materials Science: Matrerials in Electronics", v. 27 (n. 6); pp. 6606-6613. ISSN 0957-4522. https://doi.org/10.1007/s10854-016-4607-1.

Descripción

Título: Effects of CuO additives and sol-gel technique on NiNb2O6 dielectric ceramics for LTCC application
Autor/es:
  • You, Chaoyu
  • Zhang, Ying-Chun
Tipo de Documento: Artículo
Título de Revista/Publicación: Journal of Materials Science: Matrerials in Electronics
Fecha: Junio 2016
Volumen: 27
Materias:
Palabras Clave Informales: Microwave dielectric properties; LTCC; NiNb2O6; CuO; Sol-gel
Escuela: E.T.S.I. Diseño Industrial (UPM)
Departamento: Ingeniería Mecánica, Química y Diseño Industrial
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

The effects of CuO additives and sol–gel method synthesis on the sintering behavior, microstructure and the microwave dielectric properties of NiNb2O6 ceramics were investigated systematically. The NiNb2O6 ceramics were synthesized with traditional solid state method and sol–gel method, and the CuO additives were used in the solid state method for comparison. The sintering temperature of NiNb2O6 ceramics with the highest densification can be effectively reduced from about 1275 °C to 1050 and 1100 °C respectively by using CuO additions and sol–gel technique. To study their applicability in low temperature co-fired ceramic technology, dielectric properties have been characterized. The dielectric properties exhibited a significant dependence on the sintering condition, composition and crystal structure of the ceramics. In particular, the 2.5 wt% CuO-doped NiNb2O6 ceramics sintered at 1050 °C have excellent microwave dielectric properties: εr = 21.45, Q × f = 23,531 GHz, τf = −27.9 ppm/°C. While the NiNb2O6 ceramics prepared by sol–gel method obtain microwave dielectric properties as: εr = 19.16, Q × f = 11,149 GHz, τf = −27.3 ppm/°C after sintered at 1100 °C for 2 h.

Más información

ID de Registro: 42354
Identificador DC: http://oa.upm.es/42354/
Identificador OAI: oai:oa.upm.es:42354
Identificador DOI: 10.1007/s10854-016-4607-1
URL Oficial: http://link.springer.com/article/10.1007/s10854-016-4607-1
Depositado por: Memoria Investigacion
Depositado el: 08 Jul 2016 07:08
Ultima Modificación: 30 Jun 2017 22:30
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