2-D and 3-D TCAD simulations of defect-tolerant solar cell architectures

Berney Needleman, David and Wagner, Hannes and Altermatt, Pietro P. and Cañizo Nadal, Carlos del and Buonassisi, Tonio (2015). 2-D and 3-D TCAD simulations of defect-tolerant solar cell architectures. In: "25th Workshop on Crystalline Silicon Solar Cells Materials and Processes", 26/07/2015 - 29/07/2015, Keystone, Colorado, EE.UU. p. 1.

Description

Title: 2-D and 3-D TCAD simulations of defect-tolerant solar cell architectures
Author/s:
  • Berney Needleman, David
  • Wagner, Hannes
  • Altermatt, Pietro P.
  • Cañizo Nadal, Carlos del
  • Buonassisi, Tonio
Item Type: Presentation at Congress or Conference (Poster)
Event Title: 25th Workshop on Crystalline Silicon Solar Cells Materials and Processes
Event Dates: 26/07/2015 - 29/07/2015
Event Location: Keystone, Colorado, EE.UU
Title of Book: 25th Workshop on Crystalline Silicon Solar Cells Materials and Processes
Date: 2015
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We use 2-D and 3-D TCAD simulations in Sentaurus Device to determine the injection-dependent device performance impacts of point defects (e.g., Fei) and extended defects (e.g., grain boundaries). We identify features of device design that contribute to defect tolerance.

More information

Item ID: 43680
DC Identifier: http://oa.upm.es/43680/
OAI Identifier: oai:oa.upm.es:43680
Deposited by: Memoria Investigacion
Deposited on: 24 Oct 2016 19:26
Last Modified: 24 Oct 2016 19:26
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