Simple mathematical approach to solar cell/panel behavior based on datasheet information

Pindado Carrion, Santiago y Cubas Cano, Javier (2017). Simple mathematical approach to solar cell/panel behavior based on datasheet information. "Renewable Energy" ; pp. 729-738. ISSN 0960-1481. https://doi.org/10.1016/j.renene.2016.11.007.

Descripción

Título: Simple mathematical approach to solar cell/panel behavior based on datasheet information
Autor/es:
  • Pindado Carrion, Santiago
  • Cubas Cano, Javier
Tipo de Documento: Artículo
Título de Revista/Publicación: Renewable Energy
Fecha: Abril 2017
Materias:
Palabras Clave Informales: Solar cell; Photovoltaic array modeling; Circuit model; Parameter extraction
Escuela: Instituto de Microgravedad Ignacio Da Riva (UPM)
Departamento: Sistemas Aeroespaciales, Transporte Aéreo y Aeropuertos
Grupo Investigación UPM: Desarrollo y Ensayos Aeroespaciales DEA
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

new explicit mathematical expression is used to describe the behavior of a photovoltaic device (solar cell/panel), that is, its I-V curve, based on the characteristic points normally included in the manufacturers’ datasheets. This expression consists of two simple equations, one for voltage levels lower than the voltage at the maximum power point, V < Vmp, and the other one for voltage levels above this point, V > Vmp. The first equation is defined with two of the three characteristic points (short circuit and maximum power points), whereas the second one is defined with the current and voltage levels at maximum power point, the open circuit voltage, and a constant that can be adjusted based on: 1) the best fitting to the data within the bracket [Vmp, Voc], or 2) one point within this bracket, or 3) the slope of the I-V curve at the open circuit point, or 4) an estimation of that slope. Results of the solar cell/panel behavior analysis obtained with the proposed methodology, are similar to the ones obtained with the well-known 1-diode/2-resistor equivalent circuit model, in terms of accuracy.

Más información

ID de Registro: 43747
Identificador DC: http://oa.upm.es/43747/
Identificador OAI: oai:oa.upm.es:43747
Identificador DOI: 10.1016/j.renene.2016.11.007
URL Oficial: http://www.sciencedirect.com/science/article/pii/S0960148116309697
Depositado por: Biblioteca ETSI Aeronauticos
Depositado el: 28 Nov 2016 09:04
Ultima Modificación: 01 May 2017 22:30
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