Three-Bandgap absolute quantum efficiency in GaSb/GaAs quantum dot intermediate band solar cells

Ramiro Gonzalez, Iñigo and Antolín Fernández, Elisa and Hwang, J. and Teran, A. and Martin, A.J. and García-Linares Fontes, Pablo and Millunchick, J. and Phillips, J. and Martí Vega, Antonio and Luque López, Antonio (2016). Three-Bandgap absolute quantum efficiency in GaSb/GaAs quantum dot intermediate band solar cells. "IEEE Journal of Photovoltaics", v. PP (n. 99); pp. 1-5. ISSN 2156-3381. https://doi.org/10.1109/JPHOTOV.2016.2637658.

Description

Title: Three-Bandgap absolute quantum efficiency in GaSb/GaAs quantum dot intermediate band solar cells
Author/s:
  • Ramiro Gonzalez, Iñigo
  • Antolín Fernández, Elisa
  • Hwang, J.
  • Teran, A.
  • Martin, A.J.
  • García-Linares Fontes, Pablo
  • Millunchick, J.
  • Phillips, J.
  • Martí Vega, Antonio
  • Luque López, Antonio
Item Type: Article
Título de Revista/Publicación: IEEE Journal of Photovoltaics
Date: December 2016
ISSN: 2156-3381
Volume: PP
Subjects:
Freetext Keywords: Absorption, Energy measurement, Gallium arsenide, Photovoltaic cells, Quantum dots, Silicon carbide, Temperature measurement, Characterization of PV, Intermediate band solar cells, quantum dots
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
UPM's Research Group: Silicio y Nuevos Conceptos para Células Solares
Creative Commons Licenses: None

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Abstract

In this work, we study type-II GaSb/GaAs quantum-dot intermediate band solar cells (IBSCs) by means of quantum efficiency (QE) measurements. We are able, for the first time, to measure an absolute QE which clearly reveals the three characteristic bandgaps of an IBSC; EG, EH, and EL, for which we found the values 1.52, 1.02, and 0.49 eV, respectively, at 9 K. Under monochromatic illumination, QE at the energies EH and EL is 10–4 and 10–8, respectively. These low values are explained by the lack of efficient mechanisms of completing the second sub-bandgap transition when only monochromatic illumination is used. The addition of a secondary light source (E = 1.32 eV) during the measurements produces an increase in the measured QE at EL of almost three orders of magnitude.

Funding Projects

TypeCodeAcronymLeaderTitle
Madrid Regional GovernmentS2013/MAE-2780MADRID-PVAntonio Martí VegaMateriales, dispositivos y tecnología para el desarrollo de la Industria fotovoltaica
Government of SpainTEC2015-64189-C3-1-RINVENTA-PVAntonio Martí VegaUnspecified

More information

Item ID: 44703
DC Identifier: http://oa.upm.es/44703/
OAI Identifier: oai:oa.upm.es:44703
DOI: 10.1109/JPHOTOV.2016.2637658
Official URL: http://ieeexplore.ieee.org/document/7797626/?reload=true
Deposited by: Prof. Antonio Martí Vega
Deposited on: 16 Feb 2017 12:11
Last Modified: 18 Mar 2019 16:32
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