A New Switching Impulse Generator Based on Transformer Boosting and Insulated Gate Bipolar Transistor Trigger Control

Ren, Ming; Zhang, Chongxing; Dong, Ming; Ye, Rixin y Albarracin Sanchez, Ricardo (2016). A New Switching Impulse Generator Based on Transformer Boosting and Insulated Gate Bipolar Transistor Trigger Control. "Energies", v. 9 (n. 8); p. 644. ISSN 1996-1073. https://doi.org/10.3390/en9080644.

Descripción

Título: A New Switching Impulse Generator Based on Transformer Boosting and Insulated Gate Bipolar Transistor Trigger Control
Autor/es:
  • Ren, Ming
  • Zhang, Chongxing
  • Dong, Ming
  • Ye, Rixin
  • Albarracin Sanchez, Ricardo
Tipo de Documento: Artículo
Título de Revista/Publicación: Energies
Fecha: 16 Agosto 2016
Volumen: 9
Materias:
Palabras Clave Informales: impulse generator; switching impulse (SI); insulated gate bipolar transistor (IGBT); boosting transformer; impulse waveform parameters
Escuela: E.T.S.I. Diseño Industrial (UPM)
Departamento: Ingeniería Eléctrica, Electrónica Automática y Física Aplicada
Licencias Creative Commons: Ninguna

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Resumen

To make the switching impulse (SI) generator more compact, portable and feasible in field tests, a new approach based on transformer boosting was developed. To address problems such as triggering synchronization and electromagnetic interference involved with the traditional spark gap, an insulated gate bipolar transistor (IGBT) module with drive circuit was employed as the impulse trigger. An optimization design for the component parameters of the primary winding side of the transformer was realized by numerical calculation and error correction. Experiment showed that the waveform parameters of SI and oscillating switching impulse (OSI) voltages generated by the new generator were consistent with the numerical calculation and the error correction. The generator was finally built on a removable high voltage transformer with small size. Thus the volume of the generator is significantly reduced. Experiments showed that the waveform parameters of SI and OSI voltages generated by the new generator were basically consistent with the numerical calculation and the error correction.

Más información

ID de Registro: 45429
Identificador DC: http://oa.upm.es/45429/
Identificador OAI: oai:oa.upm.es:45429
Identificador DOI [BETA]: 10.3390/en9080644
URL Oficial: http://www.mdpi.com/1996-1073/9/8/644/pdf
Depositado por: Ricardo Albarracin Sanchez
Depositado el: 06 Abr 2017 07:00
Ultima Modificación: 06 Abr 2017 07:00
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