A New Switching Impulse Generator Based on Transformer Boosting and Insulated Gate Bipolar Transistor Trigger Control

Ren, Ming and Zhang, Chongxing and Dong, Ming and Ye, Rixin and Albarracín Sánchez, Ricardo (2016). A New Switching Impulse Generator Based on Transformer Boosting and Insulated Gate Bipolar Transistor Trigger Control. "Energies", v. 9 (n. 8); p. 644. ISSN 1996-1073. https://doi.org/10.3390/en9080644.

Description

Title: A New Switching Impulse Generator Based on Transformer Boosting and Insulated Gate Bipolar Transistor Trigger Control
Author/s:
  • Ren, Ming
  • Zhang, Chongxing
  • Dong, Ming
  • Ye, Rixin
  • Albarracín Sánchez, Ricardo
Item Type: Article
Título de Revista/Publicación: Energies
Date: 16 August 2016
ISSN: 1996-1073
Volume: 9
Subjects:
Freetext Keywords: impulse generator; switching impulse (SI); insulated gate bipolar transistor (IGBT); boosting transformer; impulse waveform parameters
Faculty: E.T.S.I. Diseño Industrial (UPM)
Department: Ingeniería Eléctrica, Electrónica Automática y Física Aplicada
Creative Commons Licenses: None

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Abstract

To make the switching impulse (SI) generator more compact, portable and feasible in field tests, a new approach based on transformer boosting was developed. To address problems such as triggering synchronization and electromagnetic interference involved with the traditional spark gap, an insulated gate bipolar transistor (IGBT) module with drive circuit was employed as the impulse trigger. An optimization design for the component parameters of the primary winding side of the transformer was realized by numerical calculation and error correction. Experiment showed that the waveform parameters of SI and oscillating switching impulse (OSI) voltages generated by the new generator were consistent with the numerical calculation and the error correction. The generator was finally built on a removable high voltage transformer with small size. Thus the volume of the generator is significantly reduced. Experiments showed that the waveform parameters of SI and OSI voltages generated by the new generator were basically consistent with the numerical calculation and the error correction.

More information

Item ID: 45429
DC Identifier: http://oa.upm.es/45429/
OAI Identifier: oai:oa.upm.es:45429
DOI: 10.3390/en9080644
Official URL: http://www.mdpi.com/1996-1073/9/8/644/pdf
Deposited by: Ricardo Albarracin Sanchez
Deposited on: 06 Apr 2017 07:00
Last Modified: 09 Oct 2020 06:02
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