Neutron absorbed dose in a pacemaker CMOS

Borja-Hernández, Candy Gretel and Guzmán-García, Karen Arlete and Valero-Luna, Claudia and Bañuelos-Frías, Alan and Paredes-Gutiérrez, Leticia and Hernández-Dávila, Víctor Manuel and Vega-Carrillo, Héctor René (2012). Neutron absorbed dose in a pacemaker CMOS. "Revista Mexicana de Física", v. 58 ; pp. 195-197. ISSN 0035-001X.

Description

Title: Neutron absorbed dose in a pacemaker CMOS
Author/s:
  • Borja-Hernández, Candy Gretel
  • Guzmán-García, Karen Arlete
  • Valero-Luna, Claudia
  • Bañuelos-Frías, Alan
  • Paredes-Gutiérrez, Leticia
  • Hernández-Dávila, Víctor Manuel
  • Vega-Carrillo, Héctor René
Item Type: Article
Título de Revista/Publicación: Revista Mexicana de Física
Date: June 2012
ISSN: 0035-001X
Volume: 58
Subjects:
Freetext Keywords: Marcapasos, CMOS, radioterapia, neutrones, Monte Carlo
Faculty: E.T.S.I. Industriales (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

El espectro y la dosis absorbida, debida a neutrones, por un Semiconductor de Óxido Metálico Complementario ha sido estimada utilizando métodos Monte Carlo. Eventualmente, una persona con marcapasos se convierte en un paciente oncológico que debe ser tratado en un acelerador lineal. El marcapasos contiene circuitos integrados como los CMOS que son sensibles a los campos de radiación intensos y pulsados. El haz terapéutico de un LINAC operando a voltajes mayores a 7 MV está contaminado con fotoneutrones que pueden dañar el CMOS. En este trabajo se estimó el espectro de neutrones y la dosis absorbida por un CMOS; además, se calcularon los espectros de neutrones en dos detectores puntuales ubicados dentro de la sala. El espectro de neutrones en el CMOS tiene un pico entre 0.1 y 1 MeV y otro en la región de los térmicos, conectados mediante neutrones epitérmicos. Estas mismas características se observan en los otros detectores. La dosis absorbida por el CMOS es 1:522 x 10-17 Gy por cada neutrón emitido por el término fuente = The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor, has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1:522 x 10-17 Gy per neutron emitted by the source.

More information

Item ID: 45500
DC Identifier: http://oa.upm.es/45500/
OAI Identifier: oai:oa.upm.es:45500
Official URL: http://rmf.smf.mx/
Deposited by: Memoria Investigacion
Deposited on: 20 Apr 2017 14:57
Last Modified: 20 Apr 2017 16:04
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