Manufacturing and characterization of III-V on silicon multijunction solar cells

Veinberg Vidal, Elias and Dupré, Cecilia and García-Linares Fontes, Pablo and Jany, Christophe and Thibon, Romain and Card, Tiphaine and Salvetat, Thierry and Scheiblin, Pascal and Brughera, Celine and Fournel, Frank and Désières, Yohan and Veschetti, Yannick and Sanzone, Vincent and Mur, Pierre and Decobert, Jean and Datas Medina, Alejandro (2016). Manufacturing and characterization of III-V on silicon multijunction solar cells. "Energy Procedia", v. 92 ; pp. 242-247. ISSN 1876-6102. https://doi.org/10.1016/j.egypro.2016.07.066.

Description

Title: Manufacturing and characterization of III-V on silicon multijunction solar cells
Author/s:
  • Veinberg Vidal, Elias
  • Dupré, Cecilia
  • García-Linares Fontes, Pablo
  • Jany, Christophe
  • Thibon, Romain
  • Card, Tiphaine
  • Salvetat, Thierry
  • Scheiblin, Pascal
  • Brughera, Celine
  • Fournel, Frank
  • Désières, Yohan
  • Veschetti, Yannick
  • Sanzone, Vincent
  • Mur, Pierre
  • Decobert, Jean
  • Datas Medina, Alejandro
Item Type: Article
Título de Revista/Publicación: Energy Procedia
Date: 2016
ISSN: 1876-6102
Volume: 92
Subjects:
Freetext Keywords: Solar cells; Photovoltaics; Multijunction; III-V on silicon; Direct wafer bonding
Faculty: E.T.S.I. Diseño Industrial (UPM)
Department: Ingeniería Eléctrica, Electrónica Automática y Física Aplicada
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Tandem GaInP/GaAs//Si(inactive) solar cells were manufactured by direct wafer bonding under vacuum. At this early stage, an inactive silicon substrate was used (i.e. n+ Si substrate instead of an active n-p Si junction). Bonded devices presented an Sshaped J-V curve with a kink close to Voc caused by a built-in potential barrier at the III-V//Si interface that reduces the fill factor and therefore the efficiency of the device by 7% compared to the stand-alone GaInP/GaAs tandem cells. Nevertheless, losses in Jsc and Voc caused by the bonding process, account for less than 10%. AlGaAs single junction cells, designed to be bonded on a silicon cell for low concentrator photovoltaics (LCPV), were also manufactured reaching an efficiency of 15.9% under one sun AM1.5G spectrum for a 2 cm² cell.

More information

Item ID: 45640
DC Identifier: http://oa.upm.es/45640/
OAI Identifier: oai:oa.upm.es:45640
DOI: 10.1016/j.egypro.2016.07.066
Official URL: http://www.sciencedirect.com/science/article/pii/S1876610216304933
Deposited by: Memoria Investigacion
Deposited on: 28 Apr 2017 10:35
Last Modified: 16 Jan 2019 09:25
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