Cita
Veinberg Vidal, Elias; Dupre, Cecilia; García-Linares Fontes, Pablo; Jany, Christophe; Thibon, Romain; Card, Tiphaine; Salvetat, Thierry; Scheiblin, Pascal; Brughera, Celine; Fournel, Frank; Desieres, Yohan; Veschetti, Yannick; Sanzone, Vincent; Mur, Pierre; Decobert, Jean y Datas Medina, Alejandro
(2016).
Manufacturing and characterization of III-V on silicon multijunction solar cells.
"Energy Procedia", v. 92
;
pp. 242-247.
ISSN 1876-6102.
https://doi.org/10.1016/j.egypro.2016.07.066.
Resumen
Tandem GaInP/GaAs//Si(inactive) solar cells were manufactured by direct wafer bonding under vacuum. At this early stage, an inactive silicon substrate was used (i.e. n+ Si substrate instead of an active n-p Si junction). Bonded devices presented an Sshaped J-V curve with a kink close to Voc caused by a built-in potential barrier at the III-V//Si interface that reduces the fill factor and therefore the efficiency of the device by 7% compared to the stand-alone GaInP/GaAs tandem cells. Nevertheless, losses in Jsc and Voc caused by the bonding process, account for less than 10%. AlGaAs single junction cells, designed to be bonded on a silicon cell for low concentrator photovoltaics (LCPV), were also manufactured reaching an efficiency of 15.9% under one sun AM1.5G spectrum for a 2 cm² cell.
