Citation
Veinberg Vidal, Elias and Dupré, Cecilia and García-Linares Fontes, Pablo and Jany, Christophe and Thibon, Romain and Card, Tiphaine and Salvetat, Thierry and Scheiblin, Pascal and Brughera, Celine and Fournel, Frank and Désières, Yohan and Veschetti, Yannick and Sanzone, Vincent and Mur, Pierre and Decobert, Jean and Datas Medina, Alejandro
(2016).
Manufacturing and characterization of III-V on silicon multijunction solar cells.
"Energy Procedia", v. 92
;
pp. 242-247.
ISSN 1876-6102.
https://doi.org/10.1016/j.egypro.2016.07.066.
Abstract
Tandem GaInP/GaAs//Si(inactive) solar cells were manufactured by direct wafer bonding under vacuum. At this early stage, an inactive silicon substrate was used (i.e. n+ Si substrate instead of an active n-p Si junction). Bonded devices presented an Sshaped J-V curve with a kink close to Voc caused by a built-in potential barrier at the III-V//Si interface that reduces the fill factor and therefore the efficiency of the device by 7% compared to the stand-alone GaInP/GaAs tandem cells. Nevertheless, losses in Jsc and Voc caused by the bonding process, account for less than 10%. AlGaAs single junction cells, designed to be bonded on a silicon cell for low concentrator photovoltaics (LCPV), were also manufactured reaching an efficiency of 15.9% under one sun AM1.5G spectrum for a 2 cm² cell.
