Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain-balance technology

Kalyuzhnyy, Nikolay A. and Mintairov, Sergey A. and Salii, Roman A. and Nadtochiy, Alexey M. and Payusov, Alexey S. and Brunkov, Pavel M. and Nevedomsky, Vladimir N. and Shvarts, Maxim Z. and Martí Vega, Antonio and Andreev, Viacheslav M. and Luque López, Antonio (2016). Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain-balance technology. "Progress in Photovoltaics", v. 24 (n. 9); pp. 1261-1271. ISSN 1062-7995. https://doi.org/10.1002/pip.2789.

Description

Title: Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain-balance technology
Author/s:
  • Kalyuzhnyy, Nikolay A.
  • Mintairov, Sergey A.
  • Salii, Roman A.
  • Nadtochiy, Alexey M.
  • Payusov, Alexey S.
  • Brunkov, Pavel M.
  • Nevedomsky, Vladimir N.
  • Shvarts, Maxim Z.
  • Martí Vega, Antonio
  • Andreev, Viacheslav M.
  • Luque López, Antonio
Item Type: Article
Título de Revista/Publicación: Progress in Photovoltaics
Date: 14 June 2016
Volume: 24
Subjects:
Freetext Keywords: MOVPE; solar cells; quantum dots; InAs/GaAs; QD array; photoluminescence; photocurrent
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Research into the formation of InAs quantum dots (QDs) in GaAs using the metalorganic vapor phase epitaxy technique ispresented. This technique is deemed to be cheaper than the more often used and studied molecular beam epitaxy. The bestconditions for obtaining a high photoluminescence response, indicating a good material quality, have been found among awide range of possibilities. Solar cells with an excellent quantum ef?ciency have been obtained, with a sub-bandgapphoto-response of 0.07 mA/cm2per QD layer, the highest achieved so far with the InAs/GaAs system, proving the potentialof this technology to be able to increase the ef?ciency of lattice-matched multi-junction solar cells and contributing to abetter understanding of QD technology toward the achievement of practical intermediate-band solar cells.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainENE2012-37804-C02-01UnspecifiedUnspecifiedAplicación de estructuras cuánticas y otros nuevos conceptos a la mejora de la eficiencia de las células solares

More information

Item ID: 45996
DC Identifier: http://oa.upm.es/45996/
OAI Identifier: oai:oa.upm.es:45996
DOI: 10.1002/pip.2789
Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pip.2789/full
Deposited by: Memoria Investigacion
Deposited on: 24 May 2017 16:16
Last Modified: 20 Mar 2019 16:54
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