The effect of band offsets in quantum dots

Panchak, Aleksandr; Luque López, Antonio; Vlasov, Alexey; Andreev, Viacheslav M. y Martí Vega, Antonio (2016). The effect of band offsets in quantum dots. "Solar Energy Materials And Solar Cells", v. 145 ; pp. 180-184. ISSN 0927-0248. https://doi.org/10.1016/j.solmat.2015.09.051.

Descripción

Título: The effect of band offsets in quantum dots
Autor/es:
  • Panchak, Aleksandr
  • Luque López, Antonio
  • Vlasov, Alexey
  • Andreev, Viacheslav M.
  • Martí Vega, Antonio
Tipo de Documento: Artículo
Título de Revista/Publicación: Solar Energy Materials And Solar Cells
Fecha: 1 Febrero 2016
Volumen: 145
Materias:
Palabras Clave Informales: Quantum dot Intermediateband, Potentialoffsets
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

The insertion of quantum dots in a host material produces band offsets which are greatly dependent on the field of strains brought about by this insertion. Based on the Empiric KP Hamiltonian model, the energy spectrum of the quantum dot/host system is easily calculated and a relationship between the conduction and valence band offsets is determined by the energy at which the lowest peak of the sub-bandgap quantum efficiency of an intermediate band solar cell is situated; therefore knowledge of the valence band offset leads to knowledge of both offsets. The calculated sub-bandgap quantum efficiency due to the quantum dot is rather insensitive to the value of the valence band offset. However, the calculated quantum efficiency of the wetting layer, modeled as a quantum well, is sensitive to the valence band offset and a fitting with the measured value is possible resulting in a determination of both offsets in the finished solar cell with its final field of strains. The method is applied to an intermediate-band solar cell prototype made with InAs quantum dots in GaAs.

Proyectos asociados

TipoCódigoAcrónimoResponsableTítulo
Gobierno de EspañaENE2012-37804-C02-01Sin especificarSin especificarSin especificar

Más información

ID de Registro: 45998
Identificador DC: http://oa.upm.es/45998/
Identificador OAI: oai:oa.upm.es:45998
Identificador DOI: 10.1016/j.solmat.2015.09.051
URL Oficial: http://www.sciencedirect.com/science/article/pii/S0927024815004845
Depositado por: Memoria Investigacion
Depositado el: 27 May 2017 10:28
Ultima Modificación: 01 Feb 2018 23:30
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