Citation
Soto Rodríguez, Paul and Maria Mari, Claudio and Sanguinetti, Stefano and Ruffo, Riccardo and Nötzel, Richard
(2016).
Epitaxial InN/InGaN quantum dots on Si: Cl- anion selectivity and pseudocapacitor behavior.
"Applied Physics Express", v. 9
(n. 8);
pp..
ISSN 0003-6951.
https://doi.org/10.7567/APEX.9.081004.
Abstract
Epitaxial InN quantum dots (QDs) on In-rich InGaN, applied as an electrochemical electrode, activate Cl−-anion-selective surface attachment, bringing forth faradaic/pseudocapacitor-like behavior. In contrast to traditional pseudocapacitance, here, no chemical reaction of the electrode material occurs. The anion attachment is explained by the unique combination of the surface and quantum properties of the InN QDs. A high areal capacitance is obtained for this planar electrode together with rapid and reversible charge/discharge cycles. With the growth on cheap Si substrates, the InN/InGaN QD electrochemical electrode has great potential, opening up new application fields for III–nitride semiconductors.
