Epitaxial InN/InGaN quantum dots on Si: Cl- anion selectivity and pseudocapacitor behavior

Soto Rodríguez, Paul and Maria Mari, Claudio and Sanguinetti, Stefano and Ruffo, Riccardo and Nötzel, Richard (2016). Epitaxial InN/InGaN quantum dots on Si: Cl- anion selectivity and pseudocapacitor behavior. "Applied Physics Express", v. 9 (n. 8); pp.. ISSN 0003-6951. https://doi.org/10.7567/APEX.9.081004.

Description

Title: Epitaxial InN/InGaN quantum dots on Si: Cl- anion selectivity and pseudocapacitor behavior
Author/s:
  • Soto Rodríguez, Paul
  • Maria Mari, Claudio
  • Sanguinetti, Stefano
  • Ruffo, Riccardo
  • Nötzel, Richard
Item Type: Article
Título de Revista/Publicación: Applied Physics Express
Date: 2016
ISSN: 0003-6951
Volume: 9
Subjects:
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Epitaxial InN quantum dots (QDs) on In-rich InGaN, applied as an electrochemical electrode, activate Cl−-anion-selective surface attachment, bringing forth faradaic/pseudocapacitor-like behavior. In contrast to traditional pseudocapacitance, here, no chemical reaction of the electrode material occurs. The anion attachment is explained by the unique combination of the surface and quantum properties of the InN QDs. A high areal capacitance is obtained for this planar electrode together with rapid and reversible charge/discharge cycles. With the growth on cheap Si substrates, the InN/InGaN QD electrochemical electrode has great potential, opening up new application fields for III–nitride semiconductors.

More information

Item ID: 46213
DC Identifier: http://oa.upm.es/46213/
OAI Identifier: oai:oa.upm.es:46213
DOI: 10.7567/APEX.9.081004
Official URL: https://iopscience.iop.org/article/10.7567/APEX.9.081004
Deposited by: Memoria Investigacion
Deposited on: 12 Sep 2017 15:46
Last Modified: 04 Jun 2019 08:59
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