The IBC structure as support for three band-gaps tandem devices

Jimeno, Juan Carlos and Gutierrez, José Rubén and Fano, Vanessa and Habib, Ahmed and Cañizo Nadal, Carlos del and Rasool, Muhammad A. and Otaegi, Aloña (2016). The IBC structure as support for three band-gaps tandem devices. In: "32nd European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2016)", 20/06/2016 - 24/06/2016, Munich, Alemania. pp. 845-849.

Description

Title: The IBC structure as support for three band-gaps tandem devices
Author/s:
  • Jimeno, Juan Carlos
  • Gutierrez, José Rubén
  • Fano, Vanessa
  • Habib, Ahmed
  • Cañizo Nadal, Carlos del
  • Rasool, Muhammad A.
  • Otaegi, Aloña
Item Type: Presentation at Congress or Conference (Article)
Event Title: 32nd European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2016)
Event Dates: 20/06/2016 - 24/06/2016
Event Location: Munich, Alemania
Title of Book: Proceedings of 32nd European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2016)
Date: 2016
Subjects:
Freetext Keywords: Tandem, Back Contact, Silicon Solar Cell
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The IBC structure is one of the champions in the efficiency competition of silicon devices. Industrial cells are produced with efficiency values surpassing 24%, what is due to an excellent design in terms of separation from the region where carriers are energized and emitters where these carriers are selectively separated. Their position in the back of the cell allows the access to both quasi-Fermi-levels from this surface, and enables the access to their corresponding levels of top or bottom cells from this place, far away from the entrance of light and simplifying the design of complex multi-band-gap structures. This paper will shown several of these structures, many of them achievable with well known materials with technology developed for the microelectronic sector. These solutions would be to cells with efficiencies in the 30-32 %. Using optimum materials, not clear at this moment, we estimate a technological limit of 39.4 % for these new structures.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainTEC2011-28423-C03MINECOUnspecifiedUnspecified
Government of SpainENE2014-56069-C4-1RMINECOUnspecifiedUnspecified

More information

Item ID: 46406
DC Identifier: http://oa.upm.es/46406/
OAI Identifier: oai:oa.upm.es:46406
Deposited by: Memoria Investigacion
Deposited on: 11 Jul 2017 16:08
Last Modified: 11 Jul 2017 16:08
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