Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells

Utrilla Lomas, Antonio David and Reyes, D.F. and Llorens, J.M. and Gonzalo Martin, Alicia and Artacho Huertas, Irene and Ben, T. and Gonzalez, D. and Gacevic, Zarko and Guzmán, A. and Hierro Cano, Adrian and Ulloa Herrero, Jose Maria (2016). Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells. In: "32nd European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2016)", 20/06/2016 - 24/06/2016, Munich (Germany). pp. 32-35.

Description

Title: Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
Author/s:
  • Utrilla Lomas, Antonio David
  • Reyes, D.F.
  • Llorens, J.M.
  • Gonzalo Martin, Alicia
  • Artacho Huertas, Irene
  • Ben, T.
  • Gonzalez, D.
  • Gacevic, Zarko
  • Guzmán, A.
  • Hierro Cano, Adrian
  • Ulloa Herrero, Jose Maria
Item Type: Presentation at Congress or Conference (Article)
Event Title: 32nd European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2016)
Event Dates: 20/06/2016 - 24/06/2016
Event Location: Munich (Germany)
Title of Book: Proceedings of 32nd European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2016)
Date: 2016
Subjects:
Freetext Keywords: Solar cell, Quantum dots, GaAsSb, Capping layers, Type-II
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The use of thin GaAsSb capping layers (CLs) is demonstrated to provide InAs/GaAs quantum dot (QD) solar cells (SCs) with improved efficiencies up to 20%. The application of such CLs allows the tunability of the QD ground state, switching the QD-CL band alignment to type II for high Sb contents and extending the photoresponse up to 1.5 ?m. Moreover, the CL provides a significant contribution to the photocurrent. An improved carrier collection efficiency is also found to be a main reason behind the increase of the short-circuit current density, unveiling a negative impact of the wetting layer (WL) on carrier transport in standard InAs/GaAs QD SCs. Calculations from an 8×8 k·p method suggest the attribution of such an improvement to longer carrier lifetimes in the WL-CL structure due to the transition to a type-II band alignment in Sb-containing structures. A faster open-circuit voltage recovery under light concentration is demonstrated for high Sb content type-II QD-CL structures, leading, in turn, to faster efficiency improvements with light power.

Funding Projects

TypeCodeAcronymLeaderTitle
Madrid Regional GovernmentS2013/MAE-2780UnspecifiedUnspecifiedUnspecified
Government of SpainAIC-B_2011-0806UnspecifiedUnspecifiedUnspecified

More information

Item ID: 46407
DC Identifier: http://oa.upm.es/46407/
OAI Identifier: oai:oa.upm.es:46407
Official URL: http://ec.europa.eu/research/index.cfm?pg=events&eventcode=FDE26186-EB18-DF69-338E5A9BC76825D4
Deposited by: Memoria Investigacion
Deposited on: 11 Jul 2017 16:22
Last Modified: 11 Jul 2017 16:22
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