Degradation of subcells and tunnel junctions during growth of GaInP/Ga(In)As/GaNAsSb/Ge 4-junction solar cells

García Vara, Iván and Ochoa Gómez, Mario and Lombardero, Iván and Cifuentes, Luis and Hinojosa, Manuel and Caño, Pablo and Rey-Stolle Prado, Ignacio and Algora del Valle, Carlos and Johnson, A.D. and Davies, J.I. and Tan, K.H. and Loke, W.K. and Wicaksono, S. and Yoon, F. (2017). Degradation of subcells and tunnel junctions during growth of GaInP/Ga(In)As/GaNAsSb/Ge 4-junction solar cells. "Progress in Photovoltaics: Research and Applications", v. N/A (n. N/A); pp. 1-9. ISSN 1099-159X. https://doi.org/10.1002/pip.2930.

Description

Title: Degradation of subcells and tunnel junctions during growth of GaInP/Ga(In)As/GaNAsSb/Ge 4-junction solar cells
Author/s:
  • García Vara, Iván
  • Ochoa Gómez, Mario
  • Lombardero, Iván
  • Cifuentes, Luis
  • Hinojosa, Manuel
  • Caño, Pablo
  • Rey-Stolle Prado, Ignacio
  • Algora del Valle, Carlos
  • Johnson, A.D.
  • Davies, J.I.
  • Tan, K.H.
  • Loke, W.K.
  • Wicaksono, S.
  • Yoon, F.
Item Type: Article
Título de Revista/Publicación: Progress in Photovoltaics: Research and Applications
Date: September 2017
Volume: N/A
Subjects:
Freetext Keywords: degradation,dilute nitride, 4-junction solar cell, MOVPE, thermal load
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
UPM's Research Group: Semiconductores III-V
Creative Commons Licenses: None

Full text

[img]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (1MB) | Preview

Abstract

A GaInP/Ga(In)As/GaNAsSb/Ge 4J solar cell grown using the combined MOVPE + MBE method is presented. This structure is used as a test bench to assess the effects caused by the integration of subcells and tunnel junctions into the full 4J structure. A significant degradation of the Ge bottom subcell emitter is observed during the growth of the GaNAsSb subcell, with a drop in the carrier collection efficiency at the high energy photon range that causes a ~15% lower Jsc and a Voc drop of ~50 mV at 1-sun. The Voc of the GaNAsSb subcell is shown to drop by as much as ~140 mV at 1-sun. No degradation in performance is observed in the tunnel junctions, and no further degradation is neither observed for the Ge subcell during the growth of the GaInP/Ga(In)As subcells. The hindered efficiency potential in this lattice-matched 4J architecture due to the degradation of the Ge and GaNAsSb subcells is discussed. (C) John Wiley & Sons Ltd

Funding Projects

TypeCodeAcronymLeaderTitle
FP7607153LONGESSTIQE plcLow Cost Germanium Substrates for Next Generation 4-Junction Space Solar Cells Utilising Dilute Nitride Technology
Government of SpainTEC2014‐54260‐C3‐1‐PUnspecifiedUnspecifiedUnspecified
Government of SpainPCIN‐ 2015‐181‐C02‐02UnspecifiedUnspecifiedUnspecified
Government of SpainRYC‐2014‐15621UnspecifiedUnspecifiedUnspecified
Madrid Regional GovernmentS2013/MAE‐2780MADRID-PVUnspecifiedMateriales, dispositivos y tecnología para el desarrollo de la industria fotovoltaica

More information

Item ID: 47859
DC Identifier: http://oa.upm.es/47859/
OAI Identifier: oai:oa.upm.es:47859
DOI: 10.1002/pip.2930
Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pip.2930/full
Deposited by: Dr. Iván García
Deposited on: 26 Sep 2017 08:39
Last Modified: 01 Oct 2018 22:30
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM